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參數(shù)資料
| 型號(hào)： | JANSF2N7471T1 |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-3 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 173K |
| 代理商： | JANSF2N7471T1 |
www.irf.com
7
Pre-Irradiation
IRHMS57160, JANSR2N7471T1
QG
QGS
QGD
VG
Charge
D.U.T.
VDS
ID
IG
3mA
VGS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V(BR)DSS
IAS
RG
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
.
VGS
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
E
A
S
,S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP
20A
28.5A
BOTTOM 45A
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