- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄224063 > JANSF2N7471T1 45 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA PDF資料下載
參數(shù)資料
| 型號： | JANSF2N7471T1 |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 173K |
| 代理商： | JANSF2N7471T1 |
www.irf.com
3
Pre-Irradiation
IRHMS57160, JANSR2N7471T1
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 500KRads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
100
—
100
—
V
VGS = 0V, ID = 1.0mA
VGS(th)
Gate Threshold Voltage
2.0
4.0
1.5
4.0
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
—
100
—
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
—
-100
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
—
10
—
25
A
VDS= 80V, VGS = 0V
RDS(on)
Static Drain-to-Source
—
0.013
—
0.014
VGS =12V, ID = 45A
On-State Resistance (TO-3)
RDS(on)
Static Drain-to-Source On-State
—
0.013
—
0.014
VGS = 12V, ID = 45A
Resistance (Low-Ohmic TO-254)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHMS57160 (JANSR2N7471T1), IRHMS53160 (JANSF2N7471T1) and IRHMS54160 (JANSG2N7471T1)
2. Part number IRHMS58160 (JANSH2N7471T1)
Fig a. Single Event Effect, Safe Operating Area
VSD
Diode Forward Voltage
—
1.2
—
1.2
V
VGS = 0V, IS = 45A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
36.7
309
39.5
100
I
59.8
341
32.5
100
35
25
Au
82.3
350
28.4
100
80
25
—
0
20
40
60
80
100
120
-20
-15
-10
-5
0
VGS
VDS
Br
I
Au
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANSR2N7616UBC | 800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| JANTX1N4567TR-1 | 6.4 Volt Temperature Compensated Zener Reference Diodes |
| JANTX1N4975US | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| JANTX1N977DUR-1 | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| JANTX1N3827UR-1 | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANSF2N7475T1 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7479U3 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7480U3 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7481U3 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7482T3 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。