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| 型號： | JANTXV2N3501UB |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 1/21頁 |
| 文件大?。?/td> | 137K |
| 代理商： | JANTXV2N3501UB |
MIL-PRF-19500/368F
8 July 2002
SUPERSEDING
MIL-PRF-19500/368E
24 August 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3440, 2N3440L AND 2N3440UA,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage
transistors. Four levels of product assurance are provided for each encapsulated device types as specified in
MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.
* 1.2 Physical dimensions. See figure 1 (similar to TO-5 and TO-39), figure 2 (JANHCA and JANKCA (A versions)),
figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount versions).
* 1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Types
P
T (1)
T
A
= +25
°C
P
T (2)
T
C
= +25
°C
V
CBO
V
EBO
V
CEO
I
C
T
STG
and T
OP
RθJA
2N3439, 2N3439L,
2N3439UA
W
0.8
W
5.0
V dc
450
V dc
7
V dc
350
A dc
1.0
°C
-65 to +200
°C/W
325
2N3440, 2N3440L
2N3440UA
0.8
5.0
300
7
250
1.0
-65 to +200
325
(1) Derate linearly 5.7 mW/
°C for T
A > +60°C.
(2) Derate linearly 28.6 mW/
°C for T
C > +25°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 8 October 2002.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,
P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTXV2N3506 | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-5 |
| JANTXV2N4854U | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 600MA I(C) | TO-226(6) |
| JANTXV2N4865 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 90A I(C) | STR-1/2 |
| JANTXV2N4930 | TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 50MA I(C) | TO-39 |
| JANTXV2N4931 | TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 50MA I(C) | TO-39 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV2N3506 | 功能描述:TRANS NPN 40V 3A TO-39 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/349 包裝:散裝 零件狀態(tài):在售 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:3A 電壓 - 集射極擊穿（最大值）:40V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1.5V @ 250mA，2.5A 電流 - 集電極截止（最大值）:- 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:40 @ 1.5A，2V 功率 - 最大值:1W 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:通孔 封裝/外殼:TO-205AD，TO-39-3 金屬罐 供應(yīng)商器件封裝:TO-39（TO-205AD） 標(biāo)準(zhǔn)包裝:1 |
| JANTXV2N3506A | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
| JANTXV2N3506AL | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk |
| JANTXV2N3506L | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
| JANTXV2N3507A | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
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