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| 型號： | JANTXV2N3501UB |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 12/21頁 |
| 文件大?。?/td> | 137K |
| 代理商： | JANTXV2N3501UB |
MIL-PRF-19500/368F
2
1.4 Primary electrical characteristics.
hFE2 (1)
hFE1 (1)
|hfe|
Cobo
VBE(sat) (1)
VCE(sat)
VCE = 10 V
dc
IC = 2 mA dc
VCE = 10 V dc
IC = 20 mA dc
VCE = 10 V dc
IC = 10 mA dc
f = 5 MHz
VCB = 10 V dc
IE = 0
100 kHz
≤ f ≤ 1
MHz
IC = 50 mA dc
IB = 4 mA dc
IC = 50 mA dc
IB = 4 mA dc
pF
V dc
Min
30
40
3
Max
160
15
10
1.3
0.5
(1) Pulsed, (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
HANDBOOK
DEPARTMENT OF DEFENSE
MIL-HDBK-6100 - List of Case Outlines and Dimensions for Discrete Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTXV2N3506 | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-5 |
| JANTXV2N4854U | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 600MA I(C) | TO-226(6) |
| JANTXV2N4865 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 90A I(C) | STR-1/2 |
| JANTXV2N4930 | TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 50MA I(C) | TO-39 |
| JANTXV2N4931 | TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 50MA I(C) | TO-39 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV2N3506 | 功能描述:TRANS NPN 40V 3A TO-39 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/349 包裝:散裝 零件狀態(tài):在售 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:3A 電壓 - 集射極擊穿（最大值）:40V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1.5V @ 250mA，2.5A 電流 - 集電極截止（最大值）:- 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:40 @ 1.5A，2V 功率 - 最大值:1W 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:通孔 封裝/外殼:TO-205AD，TO-39-3 金屬罐 供應(yīng)商器件封裝:TO-39（TO-205AD） 標(biāo)準(zhǔn)包裝:1 |
| JANTXV2N3506A | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
| JANTXV2N3506AL | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk |
| JANTXV2N3506L | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
| JANTXV2N3507A | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
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