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參數資料
| 型號： | JANTXV2N3501UB |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數： | 20/21頁 |
| 文件大?。?/td> | 137K |
| 代理商： | JANTXV2N3501UB |
MIL-PRF-19500/368F
8
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
* 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500, MIL-HDBK-6100 and on figure 1 (similar to TO- 5 and TO-39), figure 2 (JANHCA and JANKCA, (A
versions)), figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount
versions).
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.
3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking
may be omitted from the body, but shall be retained on the initial container.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
Qualification inspection (see 4.2).
b.
Screening (see 4.3).
c.
Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and table II
herein.
* 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the associated specification that did not request the
performance of table II tests, the tests specified in table II herein shall be performed by the next inspection lot to this
revision to maintain qualification.
相關PDF資料 |
PDF描述 |
|---|---|
| JANTXV2N3506 | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-5 |
| JANTXV2N4854U | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 600MA I(C) | TO-226(6) |
| JANTXV2N4865 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 90A I(C) | STR-1/2 |
| JANTXV2N4930 | TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 50MA I(C) | TO-39 |
| JANTXV2N4931 | TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 50MA I(C) | TO-39 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| JANTXV2N3506 | 功能描述:TRANS NPN 40V 3A TO-39 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/349 包裝:散裝 零件狀態(tài):在售 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:3A 電壓 - 集射極擊穿（最大值）:40V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1.5V @ 250mA，2.5A 電流 - 集電極截止（最大值）:- 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:40 @ 1.5A，2V 功率 - 最大值:1W 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:通孔 封裝/外殼:TO-205AD，TO-39-3 金屬罐 供應商器件封裝:TO-39（TO-205AD） 標準包裝:1 |
| JANTXV2N3506A | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
| JANTXV2N3506AL | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk |
| JANTXV2N3506L | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
| JANTXV2N3507A | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
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