參數(shù)資料
型號: JANTXV2N3501UB
英文描述: BJT
中文描述: 雙極型晶體管
文件頁數(shù): 5/21頁
文件大?。?/td> 137K
代理商: JANTXV2N3501UB
MIL-PRF-19500/368F
13
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical 3/
examination
2071
n = 45 devices, c = 0
Solderability 3/ 4/
2026
n = 15 leads, c = 0
Resistance to 3/ 4/ 5/
solvent
1022
n = 15 devices, c = 0
Temp cycling 3/ 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Heremetic seal 4/
Fine leak
Gross leak
1071
n = 22 devices, c = 0
Electrical measurements 4/
Group A, subgroup 2
Bond strength 3/ 4/
2037
Precondition TA = +250°C at t = 24 hrs
or TA = +300°C at t = 2 hrs,
n = 11 wires, c = 0
Decap internal visual (design
verification) 4/
2075
n = 4 devices, c = 0
Subgroup 2
Emitter to base cutoff current
3061
Bias condition D, VEB = 7 V dc
IEBO1
10
A dc
Collector to emitter cutoff
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
3041
Bias condition D
VCE = 300 V dc
VCE = 200 V dc
ICEO
2
A dc
Collector to emitter cutoff
current
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
3041
Bias condition A, VBE = -1.5 V dc
VCE = 450 V dc
VCE = 300 V dc
ICEX
5
A dc
Collector to base cutoff
current
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
3036
Bias condition D
VCB = 360 V dc
VCB = 250 V dc
ICBO1
2
A dc
See footnotes at end of table.
相關(guān)PDF資料
PDF描述
JANTXV2N3506 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-5
JANTXV2N4854U TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 600MA I(C) | TO-226(6)
JANTXV2N4865 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 90A I(C) | STR-1/2
JANTXV2N4930 TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 50MA I(C) | TO-39
JANTXV2N4931 TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 50MA I(C) | TO-39
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTXV2N3506 功能描述:TRANS NPN 40V 3A TO-39 制造商:microsemi ire division 系列:軍用,MIL-PRF-19500/349 包裝:散裝 零件狀態(tài):在售 晶體管類型:NPN 電流 - 集電極(Ic)(最大值):3A 電壓 - 集射極擊穿(最大值):40V 不同?Ib,Ic 時的?Vce 飽和值(最大值):1.5V @ 250mA,2.5A 電流 - 集電極截止(最大值):- 不同?Ic,Vce?時的 DC 電流增益(hFE)(最小值):40 @ 1.5A,2V 功率 - 最大值:1W 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C(TJ) 安裝類型:通孔 封裝/外殼:TO-205AD,TO-39-3 金屬罐 供應(yīng)商器件封裝:TO-39(TO-205AD) 標準包裝:1
JANTXV2N3506A 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk
JANTXV2N3506AL 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk
JANTXV2N3506L 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk
JANTXV2N3507A 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk