參數(shù)資料
型號(hào)： K4F640411C-TC500
元件分類： DRAM
英文描述： 16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
封裝： 0.400 INCH, PLASTIC, TSOP2-32
文件頁(yè)數(shù)： 15/20頁(yè)
文件大小： 367K
代理商： K4F640411C-TC500
CMOS DRAM
K4F660411C, K4F640411C
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time,
tPC.
DC AND OPERATING CHARACTERISTICS (Continued)
ICC1* : Operating Current (RAS and CAS, Address cycling @
tRC=min.)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @
tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @
tPC=min.)
ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
tRC=min)
Symbol
Power
Speed
Max
Units
K4F660411C
K4F640411C
ICC1
Don
′t care
-50
-60
90
80
120
110
mA
ICC2
Normal
Don
′t Care
2
mA
ICC3
Don
′t care
-50
-60
90
80
120
110
mA
ICC4
Don
′t care
-50
-60
60
50
70
60
mA
ICC5
Normal
Don
′t Care
1
mA
ICC6
Don
′t care
-50
-60
120
110
120
110
mA
相關(guān)PDF資料
PDF描述
K4F640412C-JC450 16M X 4 FAST PAGE DRAM, 45 ns, PDSO32
K4T1G044QC-ZCLE6 256M X 4 DDR DRAM, 0.45 ns, PBGA60
K4T56163QI-ZLD50 16M X 16 SYNCHRONOUS DRAM, 0.5 ns, PBGA84
K5A3240YT Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K6R1004C1C 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4F640411D-JC60 制造商:Samsung Semiconductor 功能描述: 制造商:Samsung Electro-Mechanics 功能描述:16M X 4 FAST PAGE DRAM, 60 ns, PDSO32
K4F640412D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Fast Page Mode
K4F640811B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Fast Page Mode
K4F640812D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Fast Page Mode
K4F641612B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode
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