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參數(shù)資料
| 型號： | K4F640411C-TC500 |
| 元件分類： | DRAM |
| 英文描述： | 16M X 4 FAST PAGE DRAM, 50 ns, PDSO32 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-32 |
| 文件頁數(shù)： | 18/20頁 |
| 文件大?。?/td> | 367K |
| 代理商： | K4F640411C-TC500 |
CMOS DRAM
K4F660411C, K4F640411C
TEST MODE CYCLE
Parameter
Symbol
-50
-60
Units
Note
Min
Max
Min
Max
Random read or write cycle time
tRC
95
115
ns
Read-modify-write cycle time
tRWC
138
160
ns
Access time from RAS
tRAC
55
65
ns
3,4,10,12
Access time from CAS
tCAC
18
20
ns
3,4,5,12
Access time from column address
tAA
30
35
ns
3,10,12
RAS pulse width
tRAS
55
10K
65
10K
ns
CAS pulse width
tCAS
18
10K
20
10K
ns
RAS hold time
tRSH
18
20
ns
CAS hold time
tCSH
55
65
ns
Column Address to RAS lead time
tRAL
30
35
ns
CAS to W delay time
tCWD
41
43
ns
7
RAS to W delay time
tRWD
78
88
ns
7
Column Address to W delay time
tAWD
53
58
ns
7
Fast Page mode cycle time
tPC
40
45
ns
Fast Page mode read-modify-write cycle time
tPRWC
81
90
ns
RAS pulse width (Fast Page cycle)
tRASP
55
200K
65
200K
ns
Access time from CAS precharge
tCPA
35
40
ns
3
OE access time
tOEA
18
20
ns
OE to data delay
tOED
18
ns
OE command hold time
tOEH
18
20
ns
( Note 11 )
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| K4F640411D-JC60 | 制造商:Samsung Semiconductor 功能描述: 制造商:Samsung Electro-Mechanics 功能描述:16M X 4 FAST PAGE DRAM, 60 ns, PDSO32 |
| K4F640412D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
| K4F640811B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| K4F640812D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| K4F641612B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
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