- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373063 > K4H560838D-GLB3 (SAMSUNG SEMICONDUCTOR CO. LTD.) DIODE ZENER SINGLE 500mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-123 3K/REEL PDF資料下載
參數(shù)資料
| 型號： | K4H560838D-GLB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DIODE ZENER SINGLE 500mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-123 3K/REEL |
| 中文描述： | 的DDR 256Mb的 |
| 文件頁數(shù)： | 13/19頁 |
| 文件大?。?/td> | 171K |
| 代理商： | K4H560838D-GLB3 |
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
AC Operating Conditions
Parameter/Condition
Symbol
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
Min
Max-10
Unit
V
V
V
V
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and CK inputs
Input Crossing Point Voltage, CK and CK inputs
VREF + 0.31
VREF - 0.31
VDDQ+0.6
0.5*VDDQ+0.2
0.7
1
2
0.5*VDDQ-0.2
AC
Overshoot/Undershoot specification for Address and Control Pins
Parameter
Specification
DDR400
1.5V
1.5V
4.5V-ns
4.5V-ns
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5
0.6875
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.3125
6.5
7.0
VDD
Overshoot
Maximum Amplitude = 1.5V
Area = 4.5V-ns
Maximum Amplitude = 1.5V
undershoot
GND
V
Tims(ns)
AC overshoot/Undershoot Definition
Notes :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H560838E-GCA2 | DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL |
| K4H560838E-GCB0 | DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL |
| K4H560838E-GCB3 | DIODE ZENER TRIPLE ISOLATED 200mW 23.72Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-363 3K/REEL |
| K4H560838E-GCC4 | DIODE ZENER TRIPLE ISOLATED 200mW 26.97Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-363 3K/REEL |
| K4H560838E-GCCC | DIODE ZENER TRIPLE ISOLATED 200mW 29.77Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-363 3K/REEL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560838D-NC/LA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb sTSOPII |
| K4H560838D-NC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb sTSOPII |
| K4H560838D-NC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb sTSOPII |
| K4H560838D-NC/LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb sTSOPII |
| K4H560838D-TC/LA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。