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參數(shù)資料
| 型號(hào)： | K4H560838D-GLB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DIODE ZENER SINGLE 500mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-123 3K/REEL |
| 中文描述： | 的DDR 256Mb的 |
| 文件頁數(shù)： | 14/19頁 |
| 文件大小： | 171K |
| 代理商： | K4H560838D-GLB3 |
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
Parameter
Specification
DDR400
1.2V
1.2V
2.5V-ns
2.5V-ns
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Overshoot
Maximum Amplitude = 1.2V
Area = 2.5V-ns
Maximum Amplitude = 1.2V
undershoot
GND
V
Tims(ns)
DQ/DM/DQS AC overshoot/Undershoot Definition
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H560838E-GCA2 | DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL |
| K4H560838E-GCB0 | DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL |
| K4H560838E-GCB3 | DIODE ZENER TRIPLE ISOLATED 200mW 23.72Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-363 3K/REEL |
| K4H560838E-GCC4 | DIODE ZENER TRIPLE ISOLATED 200mW 26.97Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-363 3K/REEL |
| K4H560838E-GCCC | DIODE ZENER TRIPLE ISOLATED 200mW 29.77Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-363 3K/REEL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560838D-NC/LA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb sTSOPII |
| K4H560838D-NC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb sTSOPII |
| K4H560838D-NC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb sTSOPII |
| K4H560838D-NC/LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb sTSOPII |
| K4H560838D-TC/LA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb |
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