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參數(shù)資料
| 型號(hào)： | K4H560838D-GLB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DIODE ZENER SINGLE 500mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-123 3K/REEL |
| 中文描述： | 的DDR 256Mb的 |
| 文件頁(yè)數(shù)： | 19/19頁(yè) |
| 文件大?。?/td> | 171K |
| 代理商： | K4H560838D-GLB3 |
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DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
j. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser
on the lesser of the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter
mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions.
k. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi
tions through the DC region must be monotony.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H560838E-GCA2 | DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL |
| K4H560838E-GCB0 | DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL |
| K4H560838E-GCB3 | DIODE ZENER TRIPLE ISOLATED 200mW 23.72Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-363 3K/REEL |
| K4H560838E-GCC4 | DIODE ZENER TRIPLE ISOLATED 200mW 26.97Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-363 3K/REEL |
| K4H560838E-GCCC | DIODE ZENER TRIPLE ISOLATED 200mW 29.77Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-363 3K/REEL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560838D-NC/LA0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb sTSOPII |
| K4H560838D-NC/LA2 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb sTSOPII |
| K4H560838D-NC/LB0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb sTSOPII |
| K4H560838D-NC/LB3 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb sTSOPII |
| K4H560838D-TC/LA0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb |
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