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參數(shù)資料
| 型號： | K4R271669F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit RDRAM(F-die) |
| 中文描述： | 128Mbit的RDRAM（架F -模） |
| 文件頁數(shù)： | 15/20頁 |
| 文件大?。?/td> | 292K |
| 代理商： | K4R271669F |
Page 13
Direct RDRAM
K4R271669F
Version 1.41 Jan. 2004
t
TEMP
Temperature control interval
100
ms
Figure 55
t
TCEN
TCE command to TCAL command
150
-
t
CYCLE
Figure 55
t
TCAL
TCAL command to quiet window
2
2
t
CYCLE
Figure 55
t
TCQUIET
Quiet window (no read data)
140
-
t
CYCLE
Figure 55
t
PAUSE
RDRAM device delay (no RSL operations allowed)
200.0
μ
s
page 38
a. MSE/MS are fields of the SKIP register. For this combination (skip override) the tDCW parameter range is effectively 0.0 to 0.0.
b. t
S,MIN
and t
H,MIN
for other t
CYCLE
values can be interpolated between or extrapolated from the timings at the 3 specified t
CYCLE
values.
c. With V
IL,CMOS
=0.5V
CMOS
-0.4V and V
IH,CMOS
=0.5V
CMOS
+0.4V
d. Effective hold becomes t
H4
’=t
H4
+[PDNXA
64
t
SCYCLE
+t
PDNXB,MAX
]-[PDNX
256
t
SCYCLE
]
if [PDNX
256
t
SCYCLE
] < [PDNXA
64
t
SCYCLE
+t
PDNXB,MAX
]. See Figure 50.
Table 11: Timing Conditions
Symbol
Parameter
Min
Max
Unit
Figure(s)
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