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參數(shù)資料
| 型號： | K4S160822D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
| 中文描述： | 2Mx8 SDRAM的1M × 8位× 2銀行同步DRAM LVTTL |
| 文件頁數(shù)： | 8/46頁 |
| 文件大?。?/td> | 1183K |
| 代理商： | K4S160822D |
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K4S160822D
CMOS SDRAM
- 8 -
Rev. 1.0 (Oct. 1999)
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Parameter
Symbol
-7
-8
-
H
-L
-10
Unit
Note
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
CLK cycle time
CAS latency=3
t
CC
7
1000
8
1000
10
1000
10
1000
10
1000
ns
1
CAS latency=2
10
12
10
12
13
CLK to valid
output delay
CAS latency=3
t
SAC
6
6
6
6
7
ns
1,2
CAS latency=2
6
6
6
7
8
Output data
hold time
CAS latency=3
t
OH
3
3
3
3
3
ns
2
CAS latency=2
3
3
3
3
3
CLK high pulse width
t
CH
3
3
3
3
3.5
ns
3
CLK low pulse width
t
CL
3
3
3
3
3.5
ns
3
Input setup time
t
SS
2
2
2
2
2.5
ns
3
Input hold time
t
SH
1
1
1
1
1
ns
3
CLK to output in Low-Z
t
SLZ
1
1
1
1
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
t
SHZ
6
6
6
6
7
ns
CAS latency=2
6
6
6
7
8
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Notes :
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Notes
Output rise time
trh
Measure in linear
region : 1.2V ~1.8V
1.37
4.37
Volts/ns
4
Output fall time
tfh
Measure in linear
region : 1.2V ~1.8V
1.30
3.8
Volts/ns
4
Output rise time
trh
Measure in linear
region : 1.2V ~1.8V
2.8
3.9
5.6
Volts/ns
1,2,3
Output fall time
tfh
Measure in linear
region : 1.2V ~1.8V
2.0
2.9
5.0
Volts/ns
1,2,3
1. Output rise and fall time must be guaranteed across V
DD
and process range.
2. Rise time specification based on 0pF + 50
to V
SS
, use these values to design to.
3. Fall time specification based on 0pF + 50
to V
DD
, use these values to design to.
4. Measured into 50pF only, use these values to characterize to.
5. All measurements done with respect to V
SS
.
Notes :
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S161622D | 512K x 16Bit x 2 Banks Synchronous DRAM |
| K4S161622E | 1M x 16 SDRAM |
| K4S161622E-TC10 | 1M x 16 SDRAM |
| K4S161622E-TC55 | 1M x 16 SDRAM |
| K4S161622E-TC60 | 1M x 16 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S160822DT-G/F10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
| K4S160822DT-G/F7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
| K4S160822DT-G/F8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
| K4S160822DT-G/FH | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
| K4S160822DT-G/FL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
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