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參數資料
| 型號： | K4T1G164QD |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb D-die DDR2 SDRAM Specification |
| 中文描述： | 1Gb的?芯片DDR2內存規(guī)格 |
| 文件頁數： | 13/27頁 |
| 文件大?。?/td> | 589K |
| 代理商： | K4T1G164QD |
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K4T1G084QD
K4T1G164QD
Rev. 1.0 March 2007
DDR2 SDRAM
11 of 29
V
DDQ
Crossing point
V
SSQ
V
TR
V
CP
V
ID
V
IX or
V
OX
< Differential signal levels >
7.6 Differential input AC logic Level
Note :
1. V
ID
(AC) specifies the input differential voltage |V
TR
-V
CP
| required for switching, where V
TR
is the true input signal (such as CK, DQS, LDQS or UDQS)
and V
CP
is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V
IH
(AC) - V
IL
(AC).
2. The typical value of V
IX
(AC) is expected to be about 0.5 * VDDQ of the transmitting device and V
IX
(AC) is expected to track variations in VDDQ .
V
IX
(AC) indicates the voltage at which differential input signals must cross.
7.7 Differential AC output parameters
Note :
1. The typical value of V
OX
(AC) is expected to be about 0.5 * VDDQ of the transmitting device and V
OX
(AC) is expected to track variations in VDDQ .
V
OX
(AC) indicates the voltage at which differential output signals must cross.
Symbol
Parameter
Min.
Max.
Units
Notes
V
ID(AC)
AC differential input voltage
0.5
V
DDQ
+ 0.6
V
1
V
IX(AC)
AC differential cross point voltage
0.5 * VDDQ - 0.175
0.5 * VDDQ + 0.175
V
2
Symbol
Parameter
Min.
Max.
Units
Note
V
OX
(AC)
AC differential cross point voltage
0.5 * VDDQ - 0.125
0.5 * VDDQ + 0.125
V
1
Note1: Test condition for Rtt measurements
Measurement Definition for Rtt(eff): Apply V
IH
(ac) and V
IL
(ac) to test pin separately, then measure current I(V
IH
(ac)) and I( V
IL
(ac)) respectively. V
IH
(ac), V
IL
(ac), and VDDQ values defined in SSTL_18
Measurement Definition for VM: Measure voltage (V
M
) at test pin (midpoint) with no load.
PARAMETER/CONDITION
SYMBOL
MIN
NOM
MAX
UNITS
NOTES
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm
Rtt1(eff)
60
75
90
ohm
1
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm
Rtt2(eff)
120
150
180
ohm
1
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm
Rtt3(eff)
40
50
60
ohm
1
Deviation of VM with respect to VDDQ/2
delta VM
- 6
+ 6
%
1
Rtt(eff) =
V
IH
(ac)
-
V
IL
(ac)
I(
V
IH
(ac)
) - I(
V
IL
(ac)
)
delta VM =
2 x Vm
VDDQ
x 100%
- 1
8.0 ODT DC electrical characteristics
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相關代理商/技術參數 |
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|---|---|
| K4T1G164QD-ZCE6000 | 制造商:Samsung Semiconductor 功能描述: |
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| K4T1G164QE-HCE7000 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant) |
| K4T1G164QE-HCLE6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM |
| K4T1G164QE-HCLE7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM |
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