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參數(shù)資料
| 型號： | K4T1G164QD |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb D-die DDR2 SDRAM Specification |
| 中文描述： | 1Gb的?芯片DDR2內存規(guī)格 |
| 文件頁數(shù)： | 15/27頁 |
| 文件大?。?/td> | 589K |
| 代理商： | K4T1G164QD |
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K4T1G084QD
K4T1G164QD
Rev. 1.0 March 2007
DDR2 SDRAM
13 of 29
(IDD values are for full operating range of Voltage and Temperature, Notes 1 - 5)
Symbol
Proposed Conditions
Units
Notes
IDD0
Operating one bank active-precharge current
;
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS\ is HIGH between valid commands;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD1
Operating one bank active-read-precharge current
;
IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD =
tRCD(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address businputs are SWITCHING; Data pat-
tern is same as IDD4W
mA
IDD2P
Precharge power-down current
;
All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are
FLOATING
mA
IDD2Q
Precharge quiet standby current
;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputsare STABLE; Data
bus inputs are FLOATING
mA
IDD2N
Precharge standby current
;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
mA
IDD3P
Active power-down current
;
All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus
inputs are STABLE; Data bus inputs are FLOATING
Fast PDN Exit MRS(12) = 0mA
mA
Slow PDN Exit MRS(12) = 1mA
mA
IDD3N
Active standby current
;
All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD4W
Operating burst write current
;
All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP
= tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus
inputs are SWITCHING
mA
IDD4R
Operating burst read current
;
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRAS-
max(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCH-
ING; Data pattern is same as IDD4W
mA
IDD5B
Burst auto refresh current
;
tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS\ is HIGH between valid com-
mands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD6
Self refresh current
;
CK and CK\ at 0V; CKE
≤
0.2V; Other control and address bus inputs are
FLOATING; Data bus inputs are FLOATING
Normal
mA
Low Power
mA
IDD7
Operating bank interleave read current
;
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC
= tRC(IDD), tRRD = tRRD(IDD), tFAW = tFAW(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS\ is HIGH between valid
commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; Refer to the fol-
lowing page for detailed timing conditions
mA
10.0 IDD Specification Parameters and Test Conditions
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4T1G164QD-ZCE6000 | 制造商:Samsung Semiconductor 功能描述: |
| K4T1G164QE | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Consumer Memory |
| K4T1G164QE-HCE7000 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant) |
| K4T1G164QE-HCLE6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM |
| K4T1G164QE-HCLE7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM |
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