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參數(shù)資料
| 型號(hào)： | K6R4016C1C-I12 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 Bit High Speed Static RAM(5V Operating). |
| 中文描述： | 256Kx16位高速靜態(tài)RAM（5V的工作）。 |
| 文件頁數(shù)： | 11/11頁 |
| 文件大?。?/td> | 184K |
| 代理商： | K6R4016C1C-I12 |
K6R4016C1C-C, K6R4016C1C-E, K6R4016C1C-I
CMOS SRAM
PRELIMPreliminaryPPPPPPPPPINARY
Rev 4.0
- 11
September 2001
C
PACKAGE DIMENSIONS
Units : millimeter.
6
5
4
3
2
1
A
B
C
D
E
F
G
H
C
B/2
B
C
B
C
Bottom View
Top View
D
E
E
E
C
Side View
0
0
A
Y
Detail A
Min
Typ
Max
A
-
0.75
-
B
8.90
9.00
9.10
B1
-
3.75
-
C
8.90
9.00
9.10
C1
-
5.25
-
D
0.30
0.35
0.40
E
-
1.05
1.20
E1
-
0.80
-
E2
0.20
0.25
0.30
Y
-
-
0.08
0.50
0.50
B1
#A1
0
A1 INDEX MARK
Notes.
1. Bump counts: 48(8row x 6column)
2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.)
3. All tolerence are +/-0.050 unless
otherwise specified.
4. Typ : Typical
5. Y is coplanarity: 0.08(Max)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R4016C1C-I15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 Bit High Speed Static RAM(5V Operating). |
| K6R4016C1C-TC15000 | 制造商:Samsung SDI 功能描述:GT |
| K6R4016C1D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges |
| K6R4016C1D-EC0810 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx4 Bit High Speed Static RAM(5.0V Operating) |
| K6R4016C1D-EC10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx4 Bit High Speed Static RAM(5.0V Operating) |
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