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參數(shù)資料
| 型號： | K6R4016C1C-I12 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 Bit High Speed Static RAM(5V Operating). |
| 中文描述： | 256Kx16位高速靜態(tài)RAM（5V的工作）。 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 184K |
| 代理商： | K6R4016C1C-I12 |
K6R4016C1C-C, K6R4016C1C-E, K6R4016C1C-I
CMOS SRAM
PRELIMPreliminaryPPPPPPPPPINARY
Rev 4.0
- 7 -
September 2001
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Valid Data
High-Z
t
RC
CS
Address
UB, LB
OE
Data out
t
HZ(3,4,5)
t
AA
t
CO
t
BA
t
OE
t
OLZ
t
LZ(4,5)
t
OH
t
OHZ
t
BHZ(3,4,5)
t
BLZ(4,5)
NOTES
(READ CYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V
OH
or V
OL
levels.
4. At any given temperature and voltage condition, t
HZ
(Max.) is less than t
LZ
(Min.) both for a given device and from device to
device.
5. Transition is measured
±
200mV
from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS=V
IL.
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
TIMING WAVEFORM OF WRITE CYCLE(1)
(OE Clock)
Address
CS
UB, LB
WE
Data in
Data out
t
WC
t
CW(3)
t
BW
t
WP(2)
t
AS(4)
t
DH
t
DW
t
OHZ(6)
High-Z
High-Z
Valid Data
OE
t
AW
t
WR(5)
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相關(guān)代理商/技術(shù)參數(shù) |
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| K6R4016C1C-I15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 Bit High Speed Static RAM(5V Operating). |
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| K6R4016C1D-EC10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx4 Bit High Speed Static RAM(5.0V Operating) |
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