- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373080 > K7A323600M-QC25 (SAMSUNG SEMICONDUCTOR CO. LTD.) 1Mx36 & 2Mx18 Synchronous SRAM PDF資料下載
參數(shù)資料
| 型號： | K7A323600M-QC25 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | DRAM |
| 英文描述： | 1Mx36 & 2Mx18 Synchronous SRAM |
| 中文描述： | 1Mx36 |
| 文件頁數(shù)： | 8/18頁 |
| 文件大?。?/td> | 247K |
| 代理商： | K7A323600M-QC25 |
1Mx36 & 2Mx18 Synchronous SRAM
- 8 -
Rev 2.0
Nov. 2003
K7A321800M
K7A323600M
CAPACITANCE*
(T
A
=25
°
C, f=1MHz)
*Note
:
Sampled not 100% tested.
PARAMETER
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Input Capacitance
C
IN
V
IN
=0V
-
5
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
7
pF
OPERATING CONDITIONS at 3.3V I/O
(0
°
C
≤
T
A
≤
70
°
C)
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD
3.135
3.3
3.465
V
V
DDQ
3.135
3.3
3.465
V
Ground
V
SS
0
0
0
V
OPERATING CONDITIONS at 2.5V I/O
(0
°
C
≤
T
A
≤
70
°
C)
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD
3.135
3.3
3.465
V
V
DDQ
2.375
2.5
2.9
V
Ground
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS*
*Note :
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on V
DD
Supply Relative to V
SS
V
DD
-0.3 to 4.6
V
Voltage on V
DDQ
Supply Relative to V
SS
V
DDQ
V
DD
V
Voltage on Input Pin Relative to V
SS
V
IN
-0.3 to V
DD
+0.3
V
Voltage on I/O Pin Relative to V
SS
V
IO
-0.3 to V
DDQ
+0.3
V
Power Dissipation
P
D
1.6
W
Storage Temperature
T
STG
-65 to 150
°
C
Operating Temperature
Commercial
T
OPR
0 to 70
°
C
Industrial
T
OPR
-40 to 85
°
C
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K7B321825M-QC65 | 1Mx36 & 2Mx18 Synchronous SRAM |
| K7B321825M-QC75 | 1Mx36 & 2Mx18 Synchronous SRAM |
| K7B801825B | 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM |
| K7B803625B | 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM |
| K7I161882B-FC16 | 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7A323630C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx36 and 2Mx18 Synchronous SRAM |
| K7A323630C-PC20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx36 and 2Mx18 Synchronous SRAM |
| K7A323630C-PI20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx36 and 2Mx18 Synchronous SRAM |
| K7A323630C-QC20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx36 and 2Mx18 Synchronous SRAM |
| K7A323630C-QI20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx36 and 2Mx18 Synchronous SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。