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參數(shù)資料
| 型號： | K7N401801B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Flash - NOR IC; NOR Flash Type:Page Mode Access; Memory Size:256MB; Memory Configuration:128K x 16; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Supply Voltage Max:3.6V |
| 中文描述： | 128K × 36至 |
| 文件頁數(shù)： | 7/18頁 |
| 文件大?。?/td> | 386K |
| 代理商： | K7N401801B |
128Kx36 & 256Kx18 Pipelined N
t
RAM
TM
- 7 -
Rev 2.0
Nov. 2003
K7N401801B
K7N403601B
STATE DIAGRAM FOR N
t
RAM
TM
BEGIN
WRITE
BURST
WRITE
BEGIN
READ
WRITE
DS
READ
DS
BURST
READ
WRITE
DS
READ
DS
READ
D
WRTE
B
DESELECT
B
R
B
W
READ
WRITE
BURST
BURST
Notes :
1. An IGNORE CLOCK EDGE cycle is not shown is the above diagram. This is because CKE HIGH only blocks the clock(CLK) input and does
not change the state of the device.
2. States change on the rising edge of the clock(CLK)
COMMAND
ACTION
DS
DESELECT
READ
BEGIN READ
WRITE
BEGIN WRITE
BURST
BEGIN READ
BEGIN WRITE
CONTINUE DESELECT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K7N401801B-QC13 | 256 Megabit, 3.0 Volt-only Page Mode Flash Memory |
| K7N403601B | 128Kx36 & 256Kx18 Pipelined NtRAM |
| K7N801849B-QC25 | THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:10R; Tolerance, resistance:20%; Beta value:2900; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes |
| K7N801801B | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| K7N803601B | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7N401801B-QC13 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Pipelined NtRAM |
| K7N401801B-QC13000 | 制造商:Samsung Semiconductor 功能描述:SRAM Chip Sync Dual 3.3V 4M-Bit 256K x 18 4.2ns 100-Pin TQFP Tray |
| K7N401801B-QI13 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Pipelined NtRAM |
| K7N401801M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Pipelined NtRAM-TM |
| K7N401801M-QC1500 | 制造商:Samsung SDI 功能描述: |
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