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參數(shù)資料
| 型號： | K7N401801B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Flash - NOR IC; NOR Flash Type:Page Mode Access; Memory Size:256MB; Memory Configuration:128K x 16; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Supply Voltage Max:3.6V |
| 中文描述： | 128K × 36至 |
| 文件頁數(shù)： | 9/18頁 |
| 文件大?。?/td> | 386K |
| 代理商： | K7N401801B |
128Kx36 & 256Kx18 Pipelined N
t
RAM
TM
- 9 -
Rev 2.0
Nov. 2003
K7N401801B
K7N403601B
ASYNCHRONOUS TRUTH TABLE
OPERATION
ZZ
OE
I/O STATUS
Sleep Mode
H
X
High-Z
Read
L
L
DQ
L
H
High-Z
Write
L
X
Din, High-Z
Deselected
L
X
High-Z
Notes
1. X means "Don
′
t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
3. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
CAPACITANCE*
(T
A
=25
°
C, f=1MHz)
*Note :
Sampled not 100% tested.
PARAMETER
SYMBOL
TEST CONDITION
TYP
MAX
UNIT
Input Capacitance
C
IN
V
IN
=0V
-
4
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
6
pF
OPERATING CONDITIONS at 3.3V I/O
(0
°
C
≤
T
A
≤
70
°
C)
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD
3.135
3.3
3.465
V
V
DDQ
3.135
3.3
3.465
V
Ground
V
SS
0
0
0
V
OPERATING CONDITIONS at 2.5V I/O
(0
°
C
≤
T
A
≤
70
°
C)
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD
3.135
3.3
3.465
V
V
DDQ
2.375
2.5
2.9
V
Ground
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS*
*Note :
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on V
DD
Supply Relative to V
SS
Voltage on V
DDQ
Supply Relative to V
SS
V
DD
-0.3 to 4.6
V
V
DDQ
V
DD
V
Voltage on Input Pin Relative to V
SS
V
IN
-0.3 to V
DD
+0.3
V
Voltage on I/O Pin Relative to V
SS
V
IO
-0.3 to V
DDQ
+0.3
V
Power Dissipation
P
D
1.4
W
Storage Temperature
T
STG
-65 to 150
°
C
Operating Temperature
Commercial
T
OPR
0 to 70
°
C
Industrial
T
OPR
-40 to 85
°
C
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K7N401801B-QC13 | 256 Megabit, 3.0 Volt-only Page Mode Flash Memory |
| K7N403601B | 128Kx36 & 256Kx18 Pipelined NtRAM |
| K7N801849B-QC25 | THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:10R; Tolerance, resistance:20%; Beta value:2900; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes |
| K7N801801B | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| K7N803601B | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7N401801B-QC13 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Pipelined NtRAM |
| K7N401801B-QC13000 | 制造商:Samsung Semiconductor 功能描述:SRAM Chip Sync Dual 3.3V 4M-Bit 256K x 18 4.2ns 100-Pin TQFP Tray |
| K7N401801B-QI13 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Pipelined NtRAM |
| K7N401801M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Pipelined NtRAM-TM |
| K7N401801M-QC1500 | 制造商:Samsung SDI 功能描述: |
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