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參數(shù)資料
| 型號： | K7Q161854A-FC20 |
| 元件分類： | SRAM |
| 英文描述： | 1M X 18 QDR SRAM, 2.2 ns, PBGA165 |
| 封裝： | 13 X 15 MM, FBGA-165 |
| 文件頁數(shù)： | 4/17頁 |
| 文件大?。?/td> | 510K |
| 代理商： | K7Q161854A-FC20 |
512Kx36 & 1Mx18 QDRTM b4 SRAM
- 12 -
Rev 1.0
July. 2002
K7Q163654A
K7Q161854A
Q1-1
Q1-2
Q1-3
Q1-4
Q2-1
Q2-2
Q2-3
Q2-4
tKLKH
tKHKH
tKHKL
tAVKH
tKHAX
tIVKH tKHIX
tCHQX1
tKHCH
tCHQV
tCHQX
TIMING WAVE FORMS OF READ AND NOP
A1
A2
Note: 1. Q1-1 refers to output from address A1+0, Q1-2 refers to output from address A1+1 i.e. the next internal burst address following A1+0.
2. Outputs are disabled one cycle after a NOP.
D1-1
D1-2
D1-3
D1-4
D2-1
D2-2
D2-3
D2-4
tKLKH
tKHKH
tKHKL
tAVKH
tKHAX
tIVKH tKHIX
tKHIX
tDVKH
tKHDX
TIMING WAVE FORMS OF WRITE AND NOP
A1
A2
Don
′t Care
Undefined
Note: 1. D1-1 refers to input to address A1+0, D1-2 refers to input to address A1+1, i.e the next internal burst address following A1+0.
K
SA
R
K
Q(Data Out)
C
K
SA
W
K
D(Data In)
tCHQZ
Don
′t Care
Undefined
tKHKH
READ
NOP
WRITE
NOP
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7Q161862 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDRTM b2 SRAM |
| K7Q161862B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDRTM b2 SRAM |
| K7Q161864B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDRTM b4 SRAM |
| K7Q161864B-FC16 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDR TM b4 SRAM |
| K7Q161864B-FC16T00 | 制造商:Samsung Semiconductor 功能描述:16MSYNCQUAD DATA RATE SRAME 1MX18FBGA, T/R - Tape and Reel |
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