參數(shù)資料
型號(hào)： K8D6316UBM-YI07
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： DRAM
英文描述： 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
中文描述： 6400位（800萬(wàn)x8/4M x16）的雙銀行NOR閃存
文件頁(yè)數(shù)： 38/48頁(yè)
文件大?。?/td> 767K
代理商： K8D6316UBM-YI07
NOR FLASH MEMORY
K8D6x16UTM / K8D6x16UBM
Revision 1.6
September, 2006
38
Alternate CE Controlled Program Operations
SWITCHING WAVEFORMS
Notes :
1. DQ7 is the output of the complement of the data written to the device.
2. DOUT is the output of the data written to the device.
3. PA : Program Address, PD : Program Data
4. The illustration shows the last two cycles of the program command sequence.
OE
Address
WE
DATA
CE
t
AH
t
AS
t
DS
t
DH
t
CP
t
OES
A0H
555H
PA
PA
Status
DOUT
Data Polling
t
CPH
t
WS
t
PGM
RY/BY
t
BUSY
t
RB
PD
t
WC
Parameter
Symbol
-7
-8
-9
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
70
-
80
-
90
-
ns
Address Setup Time
t
AS
0
-
0
-
0
-
ns
Address Hold Time
t
AH
45
-
45
-
45
-
ns
Data Setup Time
t
DS
35
-
35
-
45
-
ns
Data Hold Time
t
DH
0
-
0
-
0
-
ns
OE Setup Time
t
OES
0
-
0
-
0
-
ns
WE Setup Time
t
WS
0
-
0
-
0
-
ns
WE Hold Time
t
WH
0
-
0
-
0
-
ns
CE Pulse Width
t
CP
35
-
35
-
45
-
ns
CE Pulse Width High
t
CPH
25
-
25
-
30
-
ns
Programming Operation
Word
t
PGM
14(typ.)
14(typ.)
14(typ.)
μ
s
Byte
9(typ.)
9(typ.)
9(typ.)
μ
s
Accelerated Programming
Operation
Word
t
ACCPGM
9(typ.)
9(typ.)
9(typ.)
μ
s
Byte
7(typ.)
7(typ.)
7(typ.)
μ
s
Program/Erase Valide to RY/BY Delay
t
BUSY
90
-
90
-
90
-
ns
Recovery Time from RY/BY
t
RB
0
-
0
-
0
-
ns
相關(guān)PDF資料
PDF描述
K8D6316UBM-YI08 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
K8D6316UBM-YI09 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
K8D6316UTM-FI09 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
K9E2G08U0M 256M x 8 Bits NAND Flash Memory
K9E2G08U0M-V 256M x 8 Bits NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K8D6316UBM-YI08 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
K8D6316UBM-YI09 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
K8D6316UTM-DC07 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
K8D6316UTM-DC08 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
K8D6316UTM-DC09 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
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