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參數(shù)資料
| 型號： | K9F1208D0B-D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | TV 128C 128#22D SKT RECP |
| 中文描述： | 6400 × 8位NAND閃存 |
| 文件頁數(shù)： | 40/45頁 |
| 文件大?。?/td> | 767K |
| 代理商： | K9F1208D0B-D |
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FLASH MEMORY
40
K9F1208U0B
K9F1208D0B
Advance
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 4 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, a read command(00h or 50h) should be given before sequential page read cycle.
For Read Status of Multi Plane Program/Erase, the Read Multi-Plane Status command(71h) should be used to find out whether
multi-plane program or erase operation is completed, and whether the program or erase operation is completed successfully. The
pass/fail status data must be checked only in the Ready condition after the completion of Multi-Plane program or erase operation.
Table4. Read Staus Register Definition
NOTE
:
1. I/O 0 describes combined Pass/Fail condition for all planes. If any of the selected multiple pages/blocks fails in Program/
Erase operation, it sets "Fail" flag.
2. The pass/fail status applies only to the corresponding plane.
I/O No.
Status
Definition by 70h Command
Definition by 71h Command
I/O 0
Total Pass/Fail
Pass : "0" Fail : "1"
Pass : "0"
(1)
Fail : "1"
Pass : "0"
(2)
Fail : "1"
Pass : "0"
(2)
Fail : "1"
Pass : "0"
(2)
Fail : "1"
Pass : "0"
(2)
Fail : "1"
Must be don’t-cared
I/O 1
Plane 0 Pass/Fail
Must be don’t -cared
I/O 2
Plane 1 Pass/Fail
Must be don’t -cared
I/O 3
Plane 2 Pass/Fail
Must be don’t -cared
I/O 4
Plane 3 Pass/Fail
Must be don’t -cared
I/O 5
Reserved
Must be don’t -cared
I/O 6
Device Operation
Busy : "0" Ready : "1"
Busy : "0" Ready : "1"
I/O 7
Write Protect
Protected : "0" Not Protected : "1"
Protected : "0" Not Protected : "1"
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F1208D0B-Y | 64M x 8 Bit NAND Flash Memory |
| K9F1208U0B-D | 64M x 8 Bit NAND Flash Memory |
| K9F1208U0B-V | 64M x 8 Bit NAND Flash Memory |
| K9F1208U0B-Y | 64M x 8 Bit NAND Flash Memory |
| K9F1208U0B | Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 160V; Case Size: 25x40 mm; Packaging: Bulk |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1208D0B-Y | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
| K9F1208Q0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
| K9F1208Q0A-XXB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
| K9F1208Q0B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
| K9F1208Q0B-D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
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