參數(shù)資料
型號(hào): K9F1208Q0B-P
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64M x 8 Bit NAND Flash Memory
中文描述: 6400 × 8位NAND閃存
文件頁(yè)數(shù): 32/45頁(yè)
文件大?。?/td> 767K
代理商: K9F1208Q0B-P
FLASH MEMORY
32
K9F1208U0B
K9F1208D0B
Advance
Figure 7. Read1 Operation
Start Add.(4Cycle)
00h
Data Output(Sequential)
CE
CLE
ALE
R/B
WE
I/O
0
~
7
RE
t
R
On K9F1208U0B-Y,P or K9F1208U0B-V,F
CE must be held low during tR
A
0
~ A
7
& A
9
~ A
25
(00h Command)
Data Field
Spare Field
Main array
(01h Command)
Data Field
Spare Field
1st half array
2st half array
NOTE
: 1) After data access on 2nd half array by 01h command, the start pointer is automatically moved to 1st half
array (00h) at next cycle. 01h command is only available on X8 device(K9F1208X0B).
1)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208R0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
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K9F1208R0C-J 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208R0C-JIB0000 制造商:Samsung SDI 功能描述:
K9F1208U0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory