參數(shù)資料
型號： K9F1208Q0B-P
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64M x 8 Bit NAND Flash Memory
中文描述： 6400 × 8位NAND閃存
文件頁數(shù)： 43/45頁
文件大?。?/td> 767K
代理商： K9F1208Q0B-P
FLASH MEMORY
43
K9F1208U0B
K9F1208D0B
Advance
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 23). Its value can be
determined by the following guidance.
V
CC
R/B
open drain output
Device
GND
Rp
Figure 23. Rp vs tr ,tf & Rp vs ibusy
ibusy
Busy
Ready Vcc
VOH
tf
tr
VOL
1.8V device - V
OL
: 0.1V, V
OH
: Vcc
Q
-0.1V
2.65V device - V
OL
: 0.4V, V
OH
: Vcc
Q
-0.4V
3.3V device - V
OL
: 0.4V, V
OH
: 2.4V
C
L
相關(guān)PDF資料
PDF描述
K9F1208R0B TV 99C 97#22D 2#8(TWINAX) SKT
K9F1208B0B 64M x 8 Bit NAND Flash Memory
K9F1208U0 64M x 8 Bit NAND Flash Memory
K9F1208U0M-YIB0 64M x 8 Bit NAND Flash Memory
K9F1208U0M-YCB0 64M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208R0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208R0C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:三星公司新版本NAND FLASH
K9F1208R0C-J 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208R0C-JIB0000 制造商:Samsung SDI 功能描述:
K9F1208U0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*