參數(shù)資料
型號(hào): K9F1208U0B-V
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64M x 8 Bit NAND Flash Memory
中文描述: 6400 × 8位NAND閃存
文件頁數(shù): 41/45頁
文件大小: 767K
代理商: K9F1208U0B-V
FLASH MEMORY
41
K9F1208U0B
K9F1208D0B
Advance
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Four read cycles sequentially output the manufacture code(ECh), and the device code, Reserved(A5h), Multi plane operation
code(C0h) respectively. A5h must be don’t-cared. C0h means that device supports Multi Plane operation. The command register
remains in Read ID mode until further commands are issued to it. Figure 21 shows the operation sequence.
Figure 21. Read ID Operation 1
CE
CLE
I/O
0
~
7
ALE
RE
WE
90h
00h
ECh
Address. 1cycle
Maker code
Device code
t
CEA
t
AR
t
REA
Device
Code
A5h
C0h
Multi-Plane code
t
WHR
Device
Device Code
K9F1208Q0B
36h
K9F1208D0B
76h
K9F1208U0B
76h
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208U0B-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208U0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208U0C-J 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208U0C-JIB0000 制造商:Samsung SDI 功能描述:16M X 8 BIT NAND FLASH MEMORY
K9F1208U0C-JIB0T00 制造商:Samsung Semiconductor 功能描述: