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參數(shù)資料
| 型號(hào)： | K9F1208U0B-V |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64M x 8 Bit NAND Flash Memory |
| 中文描述： | 6400 × 8位NAND閃存 |
| 文件頁(yè)數(shù)： | 42/45頁(yè) |
| 文件大小： | 767K |
| 代理商： | K9F1208U0B-V |
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FLASH MEMORY
42
K9F1208U0B
K9F1208D0B
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Figure 22. RESET Operation
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 5 for device status after reset operation. If the device is
already in reset state a new reset command will not be accepted by the command register. The R/B pin transitions to low for tRST
after the Reset command is written. Refer to Figure 22 below.
Table5. Device Status
After Power-up
After Reset
Operation Mode
Read 1
Waiting for next command
FFh
I/O
0
~
7
R/B
t
RST
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F1208U0B-Y | 64M x 8 Bit NAND Flash Memory |
| K9F1208U0B | Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 160V; Case Size: 25x40 mm; Packaging: Bulk |
| K9F1208Q0B | 64M x 8 Bit NAND Flash Memory |
| K9F1208Q0B-D | 64M x 8 Bit NAND Flash Memory |
| K9F1208Q0B-F | 64M x 8 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1208U0B-Y | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
| K9F1208U0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F1208U0C-J | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F1208U0C-JIB0000 | 制造商:Samsung SDI 功能描述:16M X 8 BIT NAND FLASH MEMORY |
| K9F1208U0C-JIB0T00 | 制造商:Samsung Semiconductor 功能描述: |
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