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參數(shù)資料
| 型號(hào)： | K9F1208U0B-V |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64M x 8 Bit NAND Flash Memory |
| 中文描述： | 6400 × 8位NAND閃存 |
| 文件頁(yè)數(shù)： | 45/45頁(yè) |
| 文件大?。?/td> | 767K |
| 代理商： | K9F1208U0B-V |
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FLASH MEMORY
45
K9F1208U0B
K9F1208D0B
Advance
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device), 1.8V(2.65V device), 2V(3.3V device). WP pin provides hard-
ware protection and is recommended to be kept at V
IL
during power-up and power-down. A recovery time of minimum 10
μ
s is
required before internal circuit gets ready for any command sequences as shown in Figure 24. The two step command sequence for
program/erase provides additional software protection.
Figure 24. AC Waveforms for Power Transition
V
CC
WP
High
≈
≈
WE
Data Protection & Power-up sequence
1.8V device : ~ 1.5V
2.65V device : ~ 2.0V
3.3V device : ~ 2.5V
1.8V device : ~ 1.5V
2.65V device : ~ 2.0V
3.3V device : ~ 2.5V
10
μ
s
≈
≈
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F1208U0B-Y | 64M x 8 Bit NAND Flash Memory |
| K9F1208U0B | Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 160V; Case Size: 25x40 mm; Packaging: Bulk |
| K9F1208Q0B | 64M x 8 Bit NAND Flash Memory |
| K9F1208Q0B-D | 64M x 8 Bit NAND Flash Memory |
| K9F1208Q0B-F | 64M x 8 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1208U0B-Y | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
| K9F1208U0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F1208U0C-J | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F1208U0C-JIB0000 | 制造商:Samsung SDI 功能描述:16M X 8 BIT NAND FLASH MEMORY |
| K9F1208U0C-JIB0T00 | 制造商:Samsung Semiconductor 功能描述: |
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