參數(shù)資料
型號: K9F1208U0B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 160V; Case Size: 25x40 mm; Packaging: Bulk
中文描述: 6400 × 8位NAND閃存
文件頁數(shù): 18/45頁
文件大?。?/td> 767K
代理商: K9F1208U0B
FLASH MEMORY
18
K9F1208U0B
K9F1208D0B
Advance
Erase Flow Chart
Start
I/O 6 = 1
or R/B = 1
I/O 0 = 0
No
*
Write 60h
Write Block Address
Write D0h
Read Status Register
Erase Error
Yes
No
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Erase Completed
Yes
Read Flow Chart
Start
Verify ECC
No
Write 00h
Write Address
Read Data
ECC Generation
Reclaim the Error
Page Read Completed
Yes
NAND Flash Technical Notes
(Continued)
Block Replacement
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’)
* Step3
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.
* Step4
Do not further erase Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
Buffer memory of the controller.
1st
Block A
Block B
(n-1)th
nth
(page)
1
2
{
1st
(n-1)th
nth
(page)
{
an error occurs.
相關(guān)PDF資料
PDF描述
K9F1208Q0B 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-D 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-F 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-H 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-P 64M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208U0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208U0B-JIB0000 制造商:Samsung Semiconductor 功能描述:512 SLC NORMAL X8 FBGA - Trays
K9F1208U0B-JIB0T00 制造商:Samsung Semiconductor 功能描述:512 SLC NORMAL X8 FBGA - Tape and Reel
K9F1208U0B-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208U0B-PCB0000 制造商:Samsung Semiconductor 功能描述:512 SLC NORMAL X8 TSOP1 - Trays