參數(shù)資料
型號： K9F1208U0B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 160V; Case Size: 25x40 mm; Packaging: Bulk
中文描述： 6400 × 8位NAND閃存
文件頁數(shù)： 31/45頁
文件大?。?/td> 767K
代理商： K9F1208U0B
FLASH MEMORY
31
K9F1208U0B
K9F1208D0B
Advance
Device Operation
PAGE READ
Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00h to the command regis-
ter along with four address cycles. Once the command is latched, it does not need to be written for the following page read operation.
Three types of operations are available : random read, serial page read and sequential row read.
The random read mode is enabled when the page address is changed. The 528 bytes of data within the selected page are transferred
to the data registers in less than
15
μ
s
(t
R
). The system controller can detect the completion of this data transfer(tR) by analyzing the
output of R/B pin. CE must be held low while in busy for K9F1208U0B-YXB0 or K9F1208U0B-VXB0, while CE is don’t-care with
K9F1208X0B-GXB0 or K9F1208X0B-JXB0. If CE goes high before the device returns to Ready, the random read operation is inter-
rupted and Busy returns to Ready as the defined by tCRY. Since the operation was aborted, the serial page read does not output valid
data. Once the data in a page is loaded into the registers, they may be read out in 50ns cycle time by sequentially pulsing RE. High to
low transitions of the RE clock output the data stating from the selected column address up to the last column address.
The way the Read1 and Read2 commands work is like a pointer set to either the main area or the spare area. The spare area of 512
to 527 bytes may be selectively accessed by writing the Read2 command. Addresses A
0
to A
3
set the starting address of the spare
area while addresses A
4
to A
7
are ignored. The Read1 command(00h/01h) is needed to move the pointer back to the main area. Fig-
ures 7 to 10 show typical sequence and timings for each read operation.
Sequential Row Read is available only on K9F1208X0B-Y,P or K9F1208U0B-V,F :
After the data of last column address is clocked out, the next page is automatically selected for sequential row read. Waiting
15
μ
s
again allows reading the selected page. The sequential row read operation is terminated by bringing CE high. Unless the operation
is aborted, the page address is automatically incremented for sequential row read as in Read1 operation and spare sixteen bytes of
each page may be sequentially read. The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of
a block is readout, the sequential read operation must be terminated by bringing CE high. When the page address moves onto the
next block, read command and address must be given. Figures 9, 10 show typical sequence and timings for sequential row read
operation.
相關(guān)PDF資料
PDF描述
K9F1208Q0B 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-D 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-F 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-H 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-P 64M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208U0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208U0B-JIB0000 制造商:Samsung Semiconductor 功能描述:512 SLC NORMAL X8 FBGA - Trays
K9F1208U0B-JIB0T00 制造商:Samsung Semiconductor 功能描述:512 SLC NORMAL X8 FBGA - Tape and Reel
K9F1208U0B-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208U0B-PCB0000 制造商:Samsung Semiconductor 功能描述:512 SLC NORMAL X8 TSOP1 - Trays
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