- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373087 > K9F1208U0B (SAMSUNG SEMICONDUCTOR CO. LTD.) Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 160V; Case Size: 25x40 mm; Packaging: Bulk PDF資料下載
參數(shù)資料
| 型號： | K9F1208U0B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 160V; Case Size: 25x40 mm; Packaging: Bulk |
| 中文描述： | 6400 × 8位NAND閃存 |
| 文件頁數(shù)： | 34/45頁 |
| 文件大?。?/td> | 767K |
| 代理商： | K9F1208U0B |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁當(dāng)前第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁
FLASH MEMORY
34
K9F1208U0B
K9F1208D0B
Advance
Figure 10. Sequential Row Read2 Operation
(only for K9F1208U0B-Y,P and K9F1208U0B-V,F valid within a block)
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte or consecutive bytes
up to 528 bytes, in a single page program cycle. The number of consecutive partial page programming operation within the same
page without an intervening erase operation must not exceed 1 for main array and 2 for spare array. The addressing may be done in
any random order in a block. A page program cycle consists of a serial data loading period in which up to 528 bytes of data may be
loaded into the page register, followed by a non-volatile programming period where the loaded data is programmed into the appropri-
ate cell. Serial data loading can be started from 2nd half array by moving pointer. About the pointer operation, please refer to the
attached technical notes.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the four cycle address input and
then serial data loading. The bytes other than those to be programmed do not need to be loaded.The Page Program confirm com-
mand(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the pro-
gramming process. The internal write state control automatically executes the algorithms and timings necessary for program and
verify, thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command
may be entered, with RE and CE low, to read the status register. The system controller can detect the completion of a program cycle
by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are
valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 11).
The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in
Read Status command mode until another valid command is written to the command register.
50h
A
0
~ A
3
& A
9
~ A
25
I/O
X
R/B
Start Add.(4Cycle)
Data Output
Data Output
Data Output
2nd
Nth
(16Byte)
(16Byte)
1st
Figure 11. Program & Read Status Operation
80h
A
0
~ A
7
& A
9
~ A
25
528 Byte Data
I/O
0
~
7
R/B
Address & Data Input
I/O
0
Pass
10h
70h
Fail
t
R
t
R
t
R
t
PROG
≈
Data Field
Spare Field
1st
Block
Nth
(A
4
~ A
7
:
Don’t Care)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F1208Q0B | 64M x 8 Bit NAND Flash Memory |
| K9F1208Q0B-D | 64M x 8 Bit NAND Flash Memory |
| K9F1208Q0B-F | 64M x 8 Bit NAND Flash Memory |
| K9F1208Q0B-H | 64M x 8 Bit NAND Flash Memory |
| K9F1208Q0B-P | 64M x 8 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1208U0B-D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
| K9F1208U0B-JIB0000 | 制造商:Samsung Semiconductor 功能描述:512 SLC NORMAL X8 FBGA - Trays |
| K9F1208U0B-JIB0T00 | 制造商:Samsung Semiconductor 功能描述:512 SLC NORMAL X8 FBGA - Tape and Reel |
| K9F1208U0B-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F1208U0B-PCB0000 | 制造商:Samsung Semiconductor 功能描述:512 SLC NORMAL X8 TSOP1 - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。