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參數(shù)資料
| 型號： | K9F1G08R0A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:99; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| 中文描述： | 128M的× 8位/ 256M × 8位NAND閃存 |
| 文件頁數(shù)： | 37/37頁 |
| 文件大?。?/td> | 1008K |
| 代理商： | K9F1G08R0A |
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37
K9F1G08U0A
K9F1G08R0A
K9K2G08U1A
FLASH MEMORY
C
L
(F)
Figure 19. Rp vs tRHOH vs C
L
Rp = 10k
@ Vcc = 3.3V, Ta = 25
°
C
30p
50p
70p
100p
50n
100n
36
60
85
120
tRLOH / tRHOH value guidance
Figure 18. Serial Access Cycle after Read
(EDO Type, CLE=L, WE=H, ALE=L)
300n
500n
180
300
425
600
Rp = 100k
200n
400n
600n
360
600
V
CC
Device
GND
Rp
C
L
I/O Drive
tRHOH
Rp = 50k
30
42
60
18
Rp = 5k
RE
CE
R/B
I/Ox
≈
t
RR
t
CEA
t
REA
t
RP
t
REH
t
RC
≈
t
RHOH
t
RLOH
≈
≈
Dout
Dout
t
REA
≈
NOTES :
Transition is measured at
±
200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
t
RHOH
tRHOH = C
L
* V
OL
* Rp / Vcc
tRLOH(min, 3.3V part) = tRHOH - tREH
Extended Data Out Mode
For the EDO mode, the device should hold the data on the system memory bus until the beginning of the next cycle, so that controller
could fetch the data at the falling edge. However NAND flash dosen’t support the EDO mode exactly.
The device stops the data input into the I/O bus after RE rising edge. But since the previous data remains in the I/O bus, the flow of I/
O data seems like Figure 18 and the system can access serially the data with EDO mode. tRLOH which is the parameter for fetching
data at RE falling time is necessary. Its appropriate value can be obtained with the reference chart as shown in Figure 19. The tRHOH
value depands on output load(C
L
) and I/O bus Pull-up resistor (Rp).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K2G16Q0M-YIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16U0M-PCB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16U0M-PIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16U0M-YCB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16U0M-YIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1G08R0B-JIB0000 | 制造商:Samsung SDI 功能描述:PN may be NE SE |
| K9F1G08U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| K9F1G08U0B-PCB0000 | 制造商:Samsung SDI 功能描述: 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 TSOP1 - Trays |
| K9F1G08U0B-PCB0T00 | 制造商:Samsung Semiconductor 功能描述:FLASH PARALLEL 3.3V 1GBIT 128MX8 48TSOP-I - Tape and Reel |
| K9F1G08U0B-PCBO | 制造商:Samsung 功能描述:Memory,NAND,1G,128MX8,48TSOP |
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