參數(shù)資料
型號： K9F1G08R0A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:99; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 128M的× 8位/ 256M × 8位NAND閃存
文件頁數(shù)： 9/37頁
文件大?。?/td> 1008K
代理商： K9F1G08R0A
9
K9F1G08U0A
K9F1G08R0A
K9K2G08U1A
FLASH MEMORY
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1G08X0A-XCB0
:
T
A
=0 to 70
°
C, K9F1G08X0A-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
K9F1G08R0A(1.8V)
K9F1G08U0A(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.65
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
1.8V DEVICE
3.3V DEVICE
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under
Bias
K9F1G08X0A-XCB0
T
BIAS
-10 to +125
°
C
K9F1G08X0A-XIB0
-40 to +125
Storage Temperature
K9F1G08X0A-XCB0
T
STG
-65 to +150
°
C
K9F1G08X0A-XIB0
Short Circuit Current
Ios
5
mA
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
NOTE
: V
IL
can undershoot to -0.4V and V
IH
can overshoot to V
CC
+0.4V for durations of 20 ns or less.
Parameter
Symbol
Test Conditions
K9F1G08R0A
K9F1G08U0A
Unit
1.8V
3.3V
Min
Typ
Max
Min
Typ
Max
Operating
Current
Page Read with
Serial Access
I
CC
1
tRC=30ns(50ns with 1.8V device),
CE=V
IL
I
OUT
=0mA
-
10
20
-
15
30
mA
Program
I
CC
2
-
-
10
20
-
15
30
Erase
I
CC
3
-
-
10
20
-
15
30
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2,
WP=0V/V
CC
-
10
50
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Input High Voltage
V
IH*
-
0.8xV
CC
-
V
CC
+0.3
0.8xVcc
-
V
CC
+0.3
V
Input Low Voltage, All inputs
V
IL*
-
-0.3
-
0.2xVcc
-0.3
-
0.2xVcc
Output High Voltage Level
V
OH
K9F1G08R0A :I
OH
=-100
μ
A
K9F1G08U0A :I
OH
=-400
μ
A
Vcc
-0.1
-
-
2.4
-
-
Output Low Voltage Level
V
OL
K9F1G08R0A :I
OL
=100uA
K9F1G08U0A :I
OL
=2.1mA
-
-
0.1
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9F1G08R0A :V
OL
=0.1V
K9F1G08U0A :V
OL
=0.4V
3
4
-
8
10
-
mA
相關(guān)PDF資料
PDF描述
K9K2G16Q0M-YIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M-PCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M-PIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M-YCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M-YIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G08R0B-JIB0000 制造商:Samsung SDI 功能描述:PN may be NE SE
K9F1G08U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
K9F1G08U0B-PCB0000 制造商:Samsung SDI 功能描述: 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 TSOP1 - Trays
K9F1G08U0B-PCB0T00 制造商:Samsung Semiconductor 功能描述:FLASH PARALLEL 3.3V 1GBIT 128MX8 48TSOP-I - Tape and Reel
K9F1G08U0B-PCBO 制造商:Samsung 功能描述:Memory,NAND,1G,128MX8,48TSOP
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