參數(shù)資料
型號(hào): K9F5608D0C-Y
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類: 圓形連接器
英文描述: Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
中文描述: 32M的× 8位,16米x 16位NAND閃存
文件頁數(shù): 14/42頁
文件大?。?/td> 684K
代理商: K9F5608D0C-Y
FLASH MEMORY
14
K9F5608D0C
K9F5608U0C
PROGRAM/ERASE CHARACTERISTICS
Parameter
K9F5608Q0C
K9F5616D0C
K9F5616U0C
K9F5616Q0C
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
200
500
μ
s
μ
s
Dummy Busy Time for the Lock or Lock-tight Block
t
LBSY
-
5
10
Number of Partial Program Cycles
in the Same Page
Main Array
Nop
-
-
2
cycles
Spare Array
-
-
3
cycles
Block Erase Time
t
BERS
-
2
3
ms
AC TIMING CHARACTERISTICS FOR COMMAND / ADDRESS / DATA INPUT
NOTE
: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
Parameter
Symbol
Min
Max
Unit
K9F5608X0C
K9F5616U0C
K9F5616D0C
K9F5616Q0C
K9F5608X0C
K9F5616U0C
K9F5616D0C
K9F5616Q0C
CLE setup Time
t
CLS
0
0
-
-
ns
CLE Hold Time
t
CLH
10
10
-
-
ns
CE setup Time
t
CS
0
0
-
-
ns
CE Hold Time
t
CH
10
10
-
-
ns
WE Pulse Width
t
WP
25
(1)
40
-
-
ns
ALE setup Time
t
ALS
0
0
-
-
ns
ALE Hold Time
t
ALH
10
10
-
-
ns
Data setup Time
t
DS
20
20
-
-
ns
Data Hold Time
t
DH
10
10
-
-
ns
Write Cycle Time
t
WC
50
60
-
-
ns
WE High Hold Time
t
WH
15
20
-
-
ns
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5608D0D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608D0D-FCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
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K9F5608D0D-J 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608D0D-JCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory