參數資料
型號: K9F5608D0C-Y
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類: 圓形連接器
英文描述: Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
中文描述: 32M的× 8位,16米x 16位NAND閃存
文件頁數: 20/42頁
文件大?。?/td> 684K
代理商: K9F5608D0C-Y
FLASH MEMORY
20
K9F5608D0C
K9F5608U0C
K9F5608Q0C
K9F5616D0C
K9F5616U0C
K9F5616Q0C
Samsung NAND Flash has two address pointer commands as a substitute for the most significant column address. ’00h’ command
sets the pointer to ’A’ area(0~255word), and ’50h’ command sets the pointer to ’B’ area(256~263word). With these commands, the
starting column address can be set to any of a whole page(0~263word). ’00h’ or ’50h’ is sustained until another address pointer com-
mand is inputted. To program data starting from ’A’ or ’B’ area, ’00h’ or ’50h’ command must be inputted before ’80h’ command is
written. A complete read operation prior to ’80h’ command is not necessary.
00h
(1) Command input sequence for programming ’A’ area
Address / Data input
80h
10h
00h
80h
10h
Address / Data input
The address pointer is set to ’A’ area(0~255), and sustained
50h
(2) Command input sequence for programming ’B’ area
Address / Data input
80h
10h
50h
80h
10h
Address / Data input
Only ’B’ area can be programmed.
’50h’ command can be omitted.
The address pointer is set to ’B’ area(256~263), and sustained
’00h’ command can be omitted.
It depends on how many data are inputted.
’A’,’B’ area can be programmed.
Pointer Operation of K9F5616X0C(X16)
Table 3. Destination of the pointer
Command
Pointer position
Area
00h
50h
0 ~ 255 word
256 ~ 263 word
main array(A)
spare array(B)
"A" area
(00h plane)
256 Word
"B" area
(50h plane)
8 Word
"A"
"B"
Internal
Page Register
Pointer select
command
(00h, 50h)
Pointer
Figure 5. Block Diagram of Pointer Operation
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相關代理商/技術參數
參數描述
K9F5608D0D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608D0D-FCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608D0D-FIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608D0D-J 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608D0D-JCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory