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參數(shù)資料
| 型號： | K9F6408U0C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8 Bit NAND Flash Memory |
| 中文描述： | 8米× 8位NAND閃存 |
| 文件頁數(shù)： | 13/30頁 |
| 文件大?。?/td> | 784K |
| 代理商： | K9F6408U0C |
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FLASH MEMORY
13
K9F6408U0C
Identifying Initial Invalid Block(s)
All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The
initial invalid block(s) status is defined by the 6th byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every
initial invalid block has non-FFh data at the column address of 517. Since the invalid block information is also erasable in most cases,
it is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the initial invalid
block(s) based on the initial invalid block information and create the initial invalid block table via the following suggested flow
chart(Figure 1). Any intentional erasure of the initial invalid block information is prohibited.
Initial Invalid Block(s)
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by Samsung.
The information regarding the initial invalid block(s) is so called as the initial invalid block information. Devices with initial invalid
block(s) have the same quality level or as devices with all valid blocks and have the same AC and DC characteristics. An initial
invalid block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by
a select transistor. The system design must be able to mask out the initial invalid block(s) via address mapping. The 1st block of the
NAND Flash, however, is guaranteed to be a valid block up to 1K program/erase cycles.
NAND Flash Technical Notes
*
Figure 1. Flow chart to create initial invalid block table.
Start
Set Block Address = 0
Check "FFh"
Increment Block Address
Last Block
End
No
Yes
Yes
Create (or update)
Initial
Invalid Block(s) Table
No
Check "FFh" at the column address 517
of the 1st and 2nd page in the block
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9F6408U0C-B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory |
| K9F6408U0C-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| K9F6408U0C-H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory |
| K9F6408U0C-Q | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| K9F6408U0C-T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory |
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