參數(shù)資料
型號: K9F6408U0C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 8M x 8 Bit NAND Flash Memory
中文描述: 8米× 8位NAND閃存
文件頁數(shù): 17/30頁
文件大?。?/td> 784K
代理商: K9F6408U0C
FLASH MEMORY
17
K9F6408U0C
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant savings in power consumption.
CE
WE
t
WP
t
CH
Timing requirements : If CE is is exerted high during data-loading,
tCS must be minimum 10ns and tWC must be increased accordingly.
t
CS
Start Add.(3Cycle)
80h
Data Input
CE
CLE
ALE
WE
I/O
0
~
7
Data Input
CE don’t-care
10h
t
CEA
out
t
REA
CE
RE
I/O
0
~
7
Timing requirements : If CE is exerted high during sequential
data-reading, the falling edge of CE to valid data(tCEA) must
be kept greater than 45ns.
Figure 3. Program Operation with CE don’t-care.
Figure 4. Read Operation with CE don’t-care.
Start Add.(3Cycle)
00h
CE
CLE
ALE
WE
I/O
0
~
7
Data Output(sequential)
CE don’t-care
R/B
t
R
RE
On K9F6408U0C_T,Q or K9F6408U0C_V,F
CE must be held
low during tR
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相關代理商/技術(shù)參數(shù)
參數(shù)描述
K9F6408U0C-B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory
K9F6408U0C-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
K9F6408U0C-H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory
K9F6408U0C-Q 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
K9F6408U0C-T 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory