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參數(shù)資料
| 型號： | K9K1G08U0A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| 中文描述： | 128M的× 8位/ 64米× 16位NAND閃存 |
| 文件頁數(shù)： | 14/43頁 |
| 文件大?。?/td> | 906K |
| 代理商： | K9K1G08U0A |
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FLASH MEMORY
14
K9K1G08U0A
K9K1G08Q0A
K9K1G16U0A
K9K1G16Q0A
Preliminary
AC Characteristics for Operation
NOTE
: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
Parameter
Symbol
Min
Max
Unit
K9K1GXXQ0A K9K1GXXU0A K9K1GXXQ0A K9K1GXXU0A
Data Transfer from Cell to Register
t
R
-
-
12
12
μ
s
ALE to RE Delay
t
AR
10
10
-
-
ns
CLE to RE Delay
t
CLR
10
10
-
-
ns
Ready to RE Low
t
RR
20
20
-
-
ns
RE Pulse Width
t
RP
40
25
-
-
ns
WE High to Busy
t
WB
-
-
100
100
ns
Read Cycle Time
t
RC
60
50
-
-
ns
RE Access Time
t
REA
-
-
40
30
ns
CE Access Time
t
CEA
-
-
55
45
ns
RE High to Output Hi-Z
t
RHZ
-
-
30
30
ns
CE High to Output Hi-Z
t
CHZ
-
-
20
20
ns
RE or CE High to Output hold
t
OH
15
15
-
-
ns
RE High Hold Time
t
REH
20
15
-
-
ns
Output Hi-Z to RE Low
t
IR
0
0
-
-
ns
WE High to RE Low
t
WHR
60
60
-
-
ns
Device Resetting Time(Read/Program/Erase)
t
RST
-
-
5/10/500
(1)
5/10/500
(1)
μ
s
Parameter
Symbol
Min
Max
Unit
K9K1G08U0A-
Y,P only
Last RE High to Busy(at sequential read)
t
RB
-
100
ns
CE High to Ready(in case of interception by CE at read)
t
CRY
-
50 +tr(R/B)
(3)
ns
CE High Hold Time(at the last serial read)
(2)
t
CEH
100
-
ns
AC Timing Characteristics for Command / Address / Data Input
NOTE
: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
Parameter
Symbol
Min
Max
Unit
K9K1GXXQ0A
K9K1GXXU0A
K9K1GXXQ0A
K9K1GXXU0A
CLE Set-up Time
t
CLS
0
0
-
-
ns
CLE Hold Time
t
CLH
10
10
-
-
ns
CE Setup Time
t
CS
0
0
.-
.-
ns
CE Hold Time
t
CH
10
10
-
-
ns
WE Pulse Width
t
WP
40
25
(1)
-
-
ns
ALE Setup Time
t
ALS
0
0
-
-
ns
ALE Hold Time
t
ALH
10
10
-
-
ns
Data Setup Time
t
DS
20
20
-
-
ns
Data Hold Time
t
DH
10
10
-
-
ns
Write Cycle Time
t
WC
60
45
-
-
ns
WE High Hold Time
t
WH
20
15
-
-
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K1G08U0A1 | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G16Q0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G16U0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K2G08U1A | 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| K9F1G08R0A | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:99; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K1G08U0A1 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G08U0B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit NAND Flash Memory |
| K9K1G08U0B-JIB0000 | 制造商:Samsung Semiconductor 功能描述:1GB SLC DIE STACK X8 FBGA - Trays |
| K9K1G08U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash |
| K9K1G08U0M-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash |
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