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參數(shù)資料
| 型號： | K9K1G08U0A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| 中文描述： | 128M的× 8位/ 64米× 16位NAND閃存 |
| 文件頁數(shù)： | 42/43頁 |
| 文件大?。?/td> | 906K |
| 代理商： | K9K1G08U0A |
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FLASH MEMORY
42
K9K1G08U0A
K9K1G08Q0A
K9K1G16U0A
K9K1G16Q0A
Preliminary
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 25). Its value can be
determined by the following guidance.
V
CC
R/B
open drain output
Device
GND
Rp
t
I
Rp(ohm)
Figure 25. Rp vs tr ,tf & Rp vs ibusy
Ibusy
tr
ibusy
Busy
Ready Vcc
@ Vcc = 3.3V, Ta = 25
°
C , C
L
= 100pF
VOH
tf
tr
1K
2K
3K
4K
100n
200n
300n
3m
2m
1m
100
tf
200
300
400
3.6
3.6
3.6
3.6
2.4
1.2
0.8
0.6
VOL
Rp(min, 1.8V part) =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
1.85V
3mA
+
Σ
I
L
where I
L
is the sum of the input currents of all devices tied to the R/B pin.
Rp value guidance
Rp(max) is determined by maximum permissible limit of tr
Rp(min, 3.3V part) =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
3.2V
8mA
+
Σ
I
L
1.8V device - V
OL
: 0.1V, V
OH
: Vcc
Q
-0.1V
3.3V device - V
OL
: 0.4V, V
OH
: 2.4V
t
I
Rp(ohm)
Ibusy
tr
@ Vcc = 1.8V, Ta = 25
°
C , C
L
= 30pF
1K
2K
3K
4K
100n
200n
300n
3m
2m
1m
30
tf
60
90
120
1.7
1.7
1.7
1.7
1.7
0.85
0.57
0.43
C
L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K1G08U0A1 | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G16Q0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G16U0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K2G08U1A | 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| K9F1G08R0A | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:99; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K1G08U0A1 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G08U0B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit NAND Flash Memory |
| K9K1G08U0B-JIB0000 | 制造商:Samsung Semiconductor 功能描述:1GB SLC DIE STACK X8 FBGA - Trays |
| K9K1G08U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash |
| K9K1G08U0M-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash |
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