參數(shù)資料
型號(hào)： K9K1G08U0B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128M x 8 Bit NAND Flash Memory
中文描述： 128M的× 8位NAND閃存
文件頁數(shù)： 10/41頁
文件大?。?/td> 1072K
代理商： K9K1G08U0B
FLASH MEMORY
10
K9K1G08U0B
K9K1G08R0B
K9K1G08B0B
Advance
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
NOTE
: V
IL
can undershoot to -0.4V and V
IH
can overshoot to V
CC
+0.4V for durations of 20 ns or less
Parameter
Symbol
Test Conditions
K9K1G08X0B
Unit
1.8V
2.7V
3.3V
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Operating
Current
Sequential
Read
I
CC
1
tRC=50ns
(K9K1G08R0B:60ns), CE=V
IL
I
OUT
=0mA
-
10
20
-
10
20
-
15
30
mA
Program
I
CC
2
-
-
10
20
-
10
20
-
15
30
Erase
I
CC
3
-
-
10
20
-
10
20
-
15
30
Stand-by Current
(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
-
-
1
-
-
1
Stand-by Current
(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
20
100
-
10
50
-
20
100
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
20
-
-
±
10
-
-
±
20
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
20
-
-
±
10
-
-
±
20
Input High Voltage
V
IH*
I/O pins
V
CCQ
-0.4
-
V
CCQ
+0.3
V
CCQ
-0.4
-
V
CCQ
+0.3
2.0
-
V
CCQ
+0.3
V
Except I/O pins
V
CC
-
0.4
-
V
CC
+0.3
V
CC
-0.4
-
V
CC
+0.3
2.0
-
V
CC
+
0.3
Input Low Voltage, All
inputs
V
IL*
-
-0.3
-
0.4
-0.3
-
0.5
-0.3
-
0.8
Output High Voltage
Level
V
OH
K9K1G08R0B :I
OH
-100
μ
A
K9K1G08B0B :I
OH
-100
μ
A
K9K1G08U0B :I
OH
-400
μ
A
V
CCQ
-
0.1
-
-
V
CCQ
-0.4
-
-
2.4
-
-
Output Low Voltage
Level
V
OL
K9K1G08R0B :I
OL
=100uA
K9K1G08B0B :I
OH
=100
μ
A
K9K1G08U0B :I
OL
=2.1mA
-
-
0.1
-
-
0.4
-
-
0.4
Output Low Current
(R/B)
I
OL
(R/B)
K9K1G08R0B :V
OL
=0.1V
K9K1G08B0B :V
OL
=0.1V
K9K1G08U0B :V
OL
=0.4V
3
4
-
3
4
-
8
10
-
mA
Valid Block
NOTE
:
1. The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not try to access these
invalid blocks for program and erase. Refer to the attached technical notes for an appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase
cycles.
3. Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
8,052
-
8,192
Blocks
相關(guān)PDF資料
PDF描述
K9K1G08Q0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A1 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G16Q0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G16U0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K1G08U0B-JIB0000 制造商:Samsung Semiconductor 功能描述:1GB SLC DIE STACK X8 FBGA - Trays
K9K1G08U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash
K9K1G08U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash
K9K1G08U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash
K9K1G16Q0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*