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參數(shù)資料
| 型號： | K9K1G08U0B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128M x 8 Bit NAND Flash Memory |
| 中文描述： | 128M的× 8位NAND閃存 |
| 文件頁數(shù)： | 9/41頁 |
| 文件大?。?/td> | 1072K |
| 代理商： | K9K1G08U0B |
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FLASH MEMORY
9
K9K1G08U0B
K9K1G08R0B
K9K1G08B0B
Advance
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9K1G08X0B-XCB0
:
T
A
=0 to 70
°
C, K9K1G08X0B-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
K9K1G08R0B(1.8V)
K9K1G08B0B(2.7V)
K9K1G08U0B(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.65
1.8
1.95
2.5
2.7
2.9
2.7
3.3
3.6
V
Supply Voltage
V
CCQ
1.65
1.8
1.95
2.5
2.7
2.9
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
1.8V Device
2.7V/3.3V Device
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
V
CCQ
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9K1G08X0B-XCB0
T
BIAS
-10 to +125
°
C
K9K1G08X0B-XIB0
-40 to +125
Storage Temperature
K9K1G08X0B-XCB0
T
STG
-65 to +150
°
C
K9K1G08X0B-XIB0
Short Circuit Current
Ios
5
mA
相關PDF資料 |
PDF描述 |
|---|---|
| K9K1G08Q0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G08U0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G08U0A1 | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G16Q0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G16U0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9K1G08U0B-JIB0000 | 制造商:Samsung Semiconductor 功能描述:1GB SLC DIE STACK X8 FBGA - Trays |
| K9K1G08U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash |
| K9K1G08U0M-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash |
| K9K1G08U0M-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash |
| K9K1G16Q0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
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