參數(shù)資料
型號(hào)： K9K1G08U0B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128M x 8 Bit NAND Flash Memory
中文描述： 128M的× 8位NAND閃存
文件頁數(shù)： 15/41頁
文件大小： 1072K
代理商： K9K1G08U0B
FLASH MEMORY
15
K9K1G08U0B
K9K1G08R0B
K9K1G08B0B
Advance
Erase Flow Chart
Start
I/O 6 = 1
or R/B = 1
I/O 0 = 0
No
*
Write 60h
Write Block Address
Write D0h
Read Status Register
Erase Error
Yes
No
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Erase Completed
Yes
Read Flow Chart
Start
Verify ECC
No
Write 00h
Write Address
Read Data
ECC Generation
Reclaim the Error
Page Read Completed
Yes
Block Replacement
NAND Flash Technical Notes
(Continued)
When the error happens with page "a" of Block "A", try
to write the data into another Block "B" from an exter-
nal buffer. Then, prevent further system access to
Block "A" (by creating a "invalid block" table or other
appropriate scheme.)
Buffer
memory
error occurs
Block A
Block B
Page a
相關(guān)PDF資料
PDF描述
K9K1G08Q0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A1 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G16Q0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G16U0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K1G08U0B-JIB0000 制造商:Samsung Semiconductor 功能描述:1GB SLC DIE STACK X8 FBGA - Trays
K9K1G08U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash
K9K1G08U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash
K9K1G08U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash
K9K1G16Q0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
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