參數(shù)資料
型號(hào)： K9K1G08U0B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128M x 8 Bit NAND Flash Memory
中文描述： 128M的× 8位NAND閃存
文件頁(yè)數(shù)： 2/41頁(yè)
文件大?。?/td> 1072K
代理商： K9K1G08U0B
FLASH MEMORY
2
K9K1G08U0B
K9K1G08R0B
K9K1G08B0B
Advance
128M x 8 Bit Bit NAND Flash Memory
PRODUCT LIST
The K9K1G08X0B is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides
the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typically 200
μ
s on
the 528-byte page and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the data register can be
read out at 50ns(1.8V device : 60ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as
command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required,
and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9K1G08X0B
′
s extended reli-
ability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The
K9K1G08X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
GENERAL DESCRIPTION
FEATURES
Voltage Supply
- 1.8V device(K9K1G08R0B) : 1.65 ~ 1.95V
- 2.7V device(K9K1G08B0B) : 2.5 ~ 2.9V
- 3.3V device(K9K1GXXU0B) : 2.7 ~ 3.6 V
Organization
- Memory Cell Array
-128M + 4096K)bit x 8 bit
- Data Register
- (512 + 16)bit x 8bit
Automatic Program and Erase
- Page Program
- (512 + 16)Byte
- Block Erase :
- (16K + 512)Byte
Page Read Operation
- Page Size
- (512 + 16)Byte
- Random Access : 15
μ
s(Max.)
- Serial Page Access : 50ns(Min.)*
* K9K1G08R0B : 60ns
Fast Write Cycle Time
- Program time : 200
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Part Number
Vcc Range
Organization
PKG Type
K9K1G08R0B-G,J
1.65 ~ 1.95V
X8
FBGA
K9K1G08B0B-G,J
2.5 ~ 2.9V
K9K1G08U0B-G,J
2.7 ~ 3.6V
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Intelligent Copy-Back
Unique ID for Copyright Protection
Package
- K9K1G08X0B-GCB0/GIB0
63- Ball FBGA
- K9K1G08X0B-JCB0/JIB0
63- Ball FBGA - Pb-free Package
相關(guān)PDF資料
PDF描述
K9K1G08Q0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A1 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G16Q0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G16U0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K1G08U0B-JIB0000 制造商:Samsung Semiconductor 功能描述:1GB SLC DIE STACK X8 FBGA - Trays
K9K1G08U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash
K9K1G08U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash
K9K1G08U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash
K9K1G16Q0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
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