參數(shù)資料
型號： K9K2G08Q0M-PIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
中文描述： 256M × 8位/ 128M的× 16位NAND閃存
文件頁數(shù)： 11/38頁
文件大?。?/td> 734K
代理商： K9K2G08Q0M-PIB0
FLASH MEMORY
11
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0
K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
CAPACITANCE
(
T
A
=25
°
C, V
CC
=1.8V/3.3V, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
VALID BLOCK
NOTE
:
1. The
K9K2GXXX0M
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
. Do not erase
or program factory-marked bad blocks.
Refer to the attached technical notes for appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block and does not require Error Correction.
AC TEST CONDITION
(K9K2GXXX0M-XCB0 :TA=0 to 70
°
C, K9K2GXXX0M-XIB0:TA=-40 to 85
°
C
K9K2GXXQ0M : Vcc=1.70V~1.95V , K9K2GXXU0M : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
2008
-
2048
Blocks
Parameter
K9K2GXXQ0M
K9K2GXXU0M
Input Pulse Levels
0V to Vcc
0.4V to 2.4V
Input Rise and Fall Times
5ns
5ns
Input and Output Timing Levels
Vcc/2
1.5V
K9K2GXXQ0M:Output Load (Vcc:1.8V +/-10%)
K9K2GXXU0M:Output Load (Vcc:3.0V +/-10%)
1 TTL GATE and CL=30pF
1 TTL GATE and CL=50pF
K9K2GXXU0M:Output Load (Vcc:3.3V +/-10%)
-
1 TTL GATE and CL=100pF
Program / Erase Characteristics
NOTE
: 1. Max. time of
t
CBSY
depends on timing between internal program completion and data in
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
300
700
μ
s
μ
s
Dummy Busy Time for Cache Program
t
CBSY
3
700
Number of Partial Program Cycles
in the Same Page
Main Array
Nop
-
-
4
cycles
Spare Array
-
-
4
cycles
Block Erase Time
t
BERS
-
2
3
ms
NOTE
: 1. X can be V
IL
or V
IH.
2. WP and PRE should be biased to CMOS high or CMOS low for standby.
CLE
ALE
CE
WE
RE
WP
PRE
Mode
H
L
L
H
X
X
Read Mode Command Input
Address Input(5clock)
L
H
L
H
X
X
H
L
L
H
H
X
Write Mode Command Input
Address Input(5clock)
L
H
L
H
H
X
L
L
L
H
H
X
Data Input
L
L
L
H
X
X
Data Output
X
X
X
X
H
X
X
During Read(Busy)
X
X
X
X
X
H
X
During Program(Busy)
X
X
X
X
X
H
X
During Erase(Busy)
X
X
(1)
X
X
X
L
X
Write Protect
X
X
H
X
X
0V/V
CC
(2)
0V/V
CC
(2)
Stand-by
相關(guān)PDF資料
PDF描述
K9K2G16Q0M-PIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-Y 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-YIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-FCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-FIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K2G08Q0M-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08R0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9K2G08R0A-JIB0000 制造商:Samsung 功能描述:2GB SLC DIE STACK X8 FBGA - Trays
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