參數(shù)資料
型號(hào)： K9K2G08Q0M-PIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
中文描述： 256M × 8位/ 128M的× 16位NAND閃存
文件頁(yè)數(shù)： 30/38頁(yè)
文件大?。?/td> 734K
代理商： K9K2G08Q0M-PIB0
FLASH MEMORY
30
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0
K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
Device Operation
PAGE READ
Upon initial device power up, the device defaults to Read mode. This operation is also initiated by writing 00h-30h to the command
register along with five address cycles. In two consecutive read operations, the second one doesn’t need 00h command, which five
address cycles and 30h command initiates that operation. Once the command is latched, it does not need to be written for the follow-
ing page read operation. Two types of operations are available : random read, serial page read .
The random read mode is enabled when the page address is changed. The 2112 bytes(X8 device) or 1056 words(X16 device) of
data within the selected page are transferred to the data registers in less than 25
μ
s(t
R
). The system controller can detect the comple-
tion of this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the data registers, they may be
read out in 50ns cycle time by sequentially pulsing RE. The repetitive high to low transitions of the RE clock make the device output
the data starting from the selected column address up to the last column address.
The device may output random data in a page instead of the consecutive sequential data by writing random data output command.
The column address of next data, which is going to be out, may be changed to the address which follows random data output com-
mand. Random data output can be operated multiple times regardless of how many times it is done in a page.
Figure 6. Read Operation
Address(5Cycle)
00h
Col Add1,2 & Row Add1,2,3
Data Output(Serial Access)
Data Field
Spare Field
CE
CLE
ALE
R/B
WE
RE
t
R
30h
I/Ox
相關(guān)PDF資料
PDF描述
K9K2G16Q0M-PIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-Y 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-YIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-FCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-FIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K2G08Q0M-Y 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-YCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-YIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08R0A 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY
K9K2G08R0A-JIB0000 制造商:Samsung 功能描述:2GB SLC DIE STACK X8 FBGA - Trays
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