參數(shù)資料
型號(hào)： K9W4G16U1M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
中文描述： 256M × 8位/ 128M的× 16位NAND閃存
文件頁(yè)數(shù)： 16/40頁(yè)
文件大?。?/td> 641K
代理商： K9W4G16U1M
FLASH MEMORY
16
K9W4G08U1M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
K9K2G08Q0M
NAND Flash Technical Notes
(Continued)
Program Flow Chart
Start
I/O 6 = 1
or R/B = 1
Write 00h
I/O 0 = 0
No
*
If ECC is used, this verification
operation is not needed.
Write 80h
Write Address
Write Data
Write 10h
Read Status Register
Write Address
Wait for tR Time
Verify Data
Fail
Program Completed
Program Error
Yes
No
Yes
*
Program Error
Pass
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
*
Error in write or read operation
Within its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual
data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read fail-
ure after erase or program, block replacement should be done. Because program status fail during a page program does not affect
the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased
empty block and reprogramming the current target data and copying the rest of the replaced block.To improve the efficiency of mem-
ory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block
replacement. The said additional block failure rate does not include those reclaimed blocks.
Failure Mode
Detection and Countermeasure sequence
Write
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Read back ( Verify after Program) --> Block Replacement
or ECC Correction
Read
Single Bit Failure
Verify ECC -> ECC Correction
ECC
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
Write 30h
相關(guān)PDF資料
PDF描述
K9K2G08Q0M ER 19C 19#12 SKT PLUG
K9K2G16Q0M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K4G08U1M 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
K9S1208V0M-SSB0 64M x 8 Bit SmartMedia Card
K9S1208V0 64MB & 128MB SmartMediaTM Card
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9W8G08U1M 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9W8G08U1M-PCB000 制造商:Samsung Semiconductor 功能描述:
K9WAG08U0D-S 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY 256*8 4Gb D-die NAND Flash Single-Level-Cell (1bit/cell)
K9WAG08U1A 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
K9WAG08U1A_067 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
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