參數(shù)資料
型號(hào)： K9W4G16U1M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
中文描述： 256M × 8位/ 128M的× 16位NAND閃存
文件頁數(shù)： 38/40頁
文件大?。?/td> 641K
代理商： K9W4G16U1M
FLASH MEMORY
38
K9W4G08U1M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
K9K2G08Q0M
Power-On Auto-Read
The device is designed to offer automatic reading of the first page without command and address input sequence during power-on.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activation of auto-
page read function. Auto-page read function is enabled only when PRE pin is tied to V
cc.
Serial access may be done after power-on
without latency. Power-On Auto Read mode is available only on 3.3V device(K9XXGXXUXM).
Figure 16. Power-On Auto-Read
(3.3V device only)
V
CC
CE
CLE
I/O
X
ALE
RE
WE
1st
~ 1.8V
PRE
R/B
2nd
3rd
n th
≈
≈
≈
≈
≈
≈
≈
≈
t
R
相關(guān)PDF資料
PDF描述
K9K2G08Q0M ER 19C 19#12 SKT PLUG
K9K2G16Q0M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K4G08U1M 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
K9S1208V0M-SSB0 64M x 8 Bit SmartMedia Card
K9S1208V0 64MB & 128MB SmartMediaTM Card
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9W8G08U1M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9W8G08U1M-PCB000 制造商:Samsung Semiconductor 功能描述:
K9WAG08U0D-S 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY 256*8 4Gb D-die NAND Flash Single-Level-Cell (1bit/cell)
K9WAG08U1A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
K9WAG08U1A_067 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
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