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參數(shù)資料
| 型號： | K9W4G16U1M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| 中文描述： | 256M × 8位/ 128M的× 16位NAND閃存 |
| 文件頁數(shù)： | 17/40頁 |
| 文件大?。?/td> | 641K |
| 代理商： | K9W4G16U1M |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁當(dāng)前第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁
FLASH MEMORY
17
K9W4G08U1M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
K9K2G08Q0M
Erase Flow Chart
Start
I/O 6 = 1
or R/B = 1
I/O 0 = 0
No
*
Write 60h
Write Block Address
Write D0h
Read Status Register
Erase Error
Yes
No
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Erase Completed
Yes
Read Flow Chart
Start
Verify ECC
No
Write 00h
Write Address
Read Data
ECC Generation
Reclaim the Error
Page Read Completed
Yes
NAND Flash Technical Notes
(Continued)
Write 30h
Block Replacement
Buffer memory of the controller.
1st
Block A
Block B
(n-1)th
nth
(page)
{
1st
(n-1)th
nth
(page)
{
an error occurs.
1
2
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)
* Step3
Then, copy the nth page data of the Block ’A’ in the buffer memory to the nth page of the Block ’B’.
* Step4
Do not erase or program to Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K2G08Q0M | ER 19C 19#12 SKT PLUG |
| K9K2G16Q0M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K4G08U1M | 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory |
| K9S1208V0M-SSB0 | 64M x 8 Bit SmartMedia Card |
| K9S1208V0 | 64MB & 128MB SmartMediaTM Card |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9W8G08U1M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
| K9W8G08U1M-PCB000 | 制造商:Samsung Semiconductor 功能描述: |
| K9WAG08U0D-S | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY 256*8 4Gb D-die NAND Flash Single-Level-Cell (1bit/cell) |
| K9WAG08U1A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory |
| K9WAG08U1A_067 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory |
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