參數(shù)資料
型號: KFG1216Q2M-DED
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁數(shù): 35/93頁
文件大小: 1219K
代理商: KFG1216Q2M-DED
OneNAND512/OneNAND1GDDP
FLASH MEMORY
35
table 2. Controller Status Register output for modes.
NOTE:
1.
ERm and/or ERs bits in ECC status register at Load Fail case is 10. (2bits error - uncorrectable)
2. ERm and ERs bits in ECC status register at Load Reset case are 00. (No error)
3. OTP Erase does not update the register and the previous value is kept.
Mode
Controller Status Register [15:0]
CB
FC
RB
WB
EB
WRc
Reserved(0)
PRp
RSTB Reserved(0)
TO
Load Ongoing
1
0
1
0
0
0
0
0
0
000000
0
Program Ongoing
1
0
0
1
0
0
0
0
0
000000
0
Erase Ongoing
1
0
0
0
1
0
0
0
0
000000
0
Reset Ongoing
1
0
0
0
0
0
0
0
1
000000
0
Load OK
0
0
0
0
0
0
0
0
0
000000
0
Program OK
0
0
0
0
0
0
0
0
0
000000
0
Erase OK
0
0
0
0
0
0
0
0
0
000000
0
Load Fail
1)
0
0
0
0
0
0
0
0
0
000000
0
Program Fail
0
0
0
0
0
1
0
0
0
000000
0
Erase Fail
0
0
0
0
0
1
0
0
0
000000
0
Load Reset
2)
0
0
0
0
0
0
0
0
0
000000
0
Program Reset
0
0
0
0
0
0
0
0
0
000000
0
Erase Reset
0
0
0
0
0
0
0
0
0
000000
0
Program Lock
0
1
0
0
0
0
0
0
0
000000
0
Erase Lock
0
1
0
0
0
0
0
0
0
000000
0
Load Lock(Buffer Lock)
0
1
0
0
0
0
0
0
0
000000
0
OTP Program
Fail(Lock)
0
1
0
0
0
0
0
0
0
000000
0
OTP Program Fail
0
0
0
0
0
1
0
0
0
000000
0
Invalid Command
0
1
0
0
0
0
0
0
0
000000
0
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