參數(shù)資料
型號(hào)： KFG1216Q2M-DED
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 55/93頁
文件大?。?/td> 1219K
代理商： KFG1216Q2M-DED
OneNAND512/OneNAND1GDDP
FLASH MEMORY
55
Copy-Back Program Operation with Random Data Input
The Copy-Back Program Operation with Random Data Input in OneNAND consists of 2 phase, Load data into DataRAM, Modify data
and program into designated page. Data from the source page is saved in one of the on-chip DataRAM buffers and modified by the
host, then programmed into the destination page.
As shown in the flow chart, data modification is possible upon completion of load operation. ECC is also available at the end of load
operation. Therefore, using hardware ECC of OneNAND, accumulation of 1 bit error can be avoided.
Copy-Back Program Operation with Random Data Input will be effectively utilized at modifying certain bit, byte, word, or sector of
source page to destination page while it is being copied.
Start
Write ’FBA’ of Flash
Add: F100h DQ=FBA
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
Write ’Load’ Command
Add: F220h
DQ=0000h or 0013h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Read Controller
Status Register
Add: F240h DQ[10]=Error
DQ[10]=0
NO
YES
Map Out
Write 0 to interrupt register
Add: F241h DQ=0000h
Copy back completed
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Read Controller
Status Register
Add: F240h DQ[10]=Error
DQ[10]=0
Copy back Error
YES
NO
Random Data Input
Write ’FBA’ of Flash
Add: F100h DQ=FBA
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’Program’ Command
Add: F220h
DQ=0080h or 001Ah
Write 0 to interrupt register
Add: F241h DQ=0000h
Add: Random Address in
Selected DataRAM
DQ=Data
Figure 16. Copy-Back Program Operation with Random Data Input Flow Chart
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